发明授权
- 专利标题： Single crystal pulling method and apparatus for its implementation
- 专利标题（中）： 单晶拉拔方法及其实施方法
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申请号： US781842申请日： 1997-01-10
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公开(公告)号： US5891245A公开(公告)日： 1999-04-06
- 发明人: Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
- 申请人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Materials Sillcon Corporation,Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Sillcon Corporation,Mitsubishi Materials Corporation
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX8-003377 19960111; JPX8-004407 19960112
- 主分类号： C30B15/02
- IPC分类号： C30B15/02 ; C30B15/12 ; C30B35/00
摘要：
A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264
公开/授权文献
- US5211182A Home ovulation test kit and method 公开/授权日：1993-05-18
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