发明授权
- 专利标题： Process gas focusing apparatus and method
- 专利标题（中）： 工艺气体聚焦装置及方法
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申请号： US592821申请日： 1996-01-26
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公开(公告)号： US5891348A公开(公告)日： 1999-04-06
- 发明人: Yan Ye , Gerald Zheyao Yin , Diana Xiaobing Ma , Steve S. Y. Mak
- 申请人： Yan Ye , Gerald Zheyao Yin , Diana Xiaobing Ma , Steve S. Y. Mak
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H05H1/46
- IPC分类号： H05H1/46 ; C23C16/44 ; C23C16/455 ; C23F4/00 ; H01J37/32 ; H01L21/00 ; H01L21/205 ; H01L21/302 ; H01L21/304 ; H01L21/3065 ; H01L21/687 ; H05H1/00
摘要：
An apparatus (20) for uniformly processing substrates (25) having a surface with a center (80) and a peripheral edge (85). The apparatus (20) comprises (i) a process chamber (30) having a gas distributor (55) for distributing process gas in the process chamber (30); (ii) a support (75) for supporting a substrate (25) in the process chamber (30); (iii) a plasma generator for forming a plasma from the process gas in the process chamber (30); and (iv) a focus ring (90) in the process chamber (30). The focus ring (90) comprises (a) a wall (95) surrounding the substrate (25) to substantially contain the plasma on the substrate surface, and (b) a channel (100) in the wall (95). The channel (100) has an inlet (105) adjacent to, and extending substantially continuously around the peripheral edge (85) of the substrate surface. The inlet (105) of the channel (100) has a width w sized to allow a sufficient amount of process gas to flow into the channel (100) to maintain substantially equal processing rates at the center (80) and peripheral edge (85) of the substrate surface.
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