公开(公告)号：US20090004875A1

公开(公告)日：2009-01-01

申请号：US12163888

申请日：2008-06-27

Applicant: Meihua Shen ,  Diana Xiaobing Ma ,  Wendy H. Yeh ,  Kenneth MacWilliams ,  Wei Liu ,  Thorsten B. Lill

Inventor： Meihua Shen ,  Diana Xiaobing Ma ,  Wendy H. Yeh ,  Kenneth MacWilliams ,  Wei Liu ,  Thorsten B. Lill

IPC: H01L21/308

CPC classification number: H01L21/0337

Abstract: Methods for forming an ultra thin structure using a method that includes trimming a mask layer during an etching process are provided. The embodiments described herein may be advantageously utilized to fabricate a submicron structure on a substrate having a critical dimension less than 55 nm and beyond. In one embodiment, a method of forming a submicron structure on a substrate may include providing a substrate having a patterned photoresist layer disposed on a film stack into an etch chamber, wherein the film stack includes at least a hardmask layer disposed on an underlying layer, trimming the photoresist layer to a first predetermined critical dimension, etching the hardmask layer through openings defined by the trimmed photoresist layer, trimming the hardmask layer to a second predetermined critical dimension, and etching the underlying layer through openings defined by the trimmed hardmask layer.

Abstract translation: 提供了使用包括在蚀刻处理期间修整掩模层的方法来形成超薄结构的方法。 本文描述的实施例可有利地用于在临界尺寸小于55nm及以上的衬底上制造亚微米结构。 在一个实施例中，在衬底上形成亚微米结构的方法可以包括提供具有设置在膜堆叠上的图案化光致抗蚀剂层进入蚀刻室的衬底，其中所述膜堆叠包括至少设置在下层上的硬掩模层， 将光致抗蚀剂层修剪到第一预定临界尺寸，通过由修剪的光致抗蚀剂层限定的开口蚀刻硬掩模层，将硬掩模层修剪到第二预定临界尺寸，以及通过由修剪的硬掩模层限定的开孔蚀刻下层。

公开(公告)号：US06620289B1

公开(公告)日：2003-09-16

申请号：US09300563

申请日：1999-04-27

Applicant: Chun Yan ,  Yan Ye ,  Diana Xiaobing Ma

Inventor： Chun Yan ,  Yan Ye ,  Diana Xiaobing Ma

IPC: H01L21306

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45502 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

Abstract: A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.

Abstract translation: 一种用于通过提供工艺气体的非对称流动并用工艺气体处理工件来处理腔室中的工件的方法和装置。 不对称流动抵消了室中反应物质的不均匀分布。 不对称流动可以通过将工艺气体引入多个气体喷嘴来实现，所述多个气体喷嘴通过邻近泵口的腔室的侧壁连通，同时用连接到泵口的泵泵送气体。 本发明的方法可以通过仅打开最靠近泵的气体喷嘴并阻挡任何其它气体喷嘴而与常规处理室一起使用。 或者，该方法可以在具有仅位于泵端口附近的气体喷嘴的处理室中实现。

公开(公告)号：US5710486A

公开(公告)日：1998-01-20

申请号：US436513

申请日：1995-05-08

Applicant: Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

Inventor： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

IPC: H05H1/46 ,  C23C14/24 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01J7/24

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/321

Abstract: The invention is embodiment in a plasma reactor for processing a semiconductor wafer, the reactor having a pair of parallel capacitive electrodes at the ceiling and base of the processing chamber, respectively, each of the capacitive electrodes capacitvely coupling RF power into the chamber in accordance with a certain RF phase relationship between the pair of electrodes during processing of the semiconductor wafer for ease of plasma ignition and precise control of plasma ion energy and process reproducibility, and an inductive coil wound around a portion of the chamber and inductively coupling RF power into the chamber for independent control of plasma ion density. Preferably, in order to minimize the number of RF sources while providing independent power control, the invention includes power splitting to separately provide power from a common source or sources to the pair of electrodes and to the coil.

Abstract translation: 本发明是用于处理半导体晶片的等离子体反应器中的实施例，该反应器分别在处理室的天花板和底部具有一对平行的电容电极，每个电容电极根据电容电容将RF功率电容耦合到室中 在半导体晶片的处理期间该对电极之间的某些RF相位关系易于等离子体点火并且精确控制等离子体离子能量和工艺再现性，以及感应线圈，其缠绕在腔室的一部分上并将RF功率感应耦合到 用于独立控制等离子体离子密度。 优选地，为了在提供独立的功率控制的同时最小化RF源的数量，本发明包括功率分配以从共同的源或源分别向一对电极和线圈供电。

公开(公告)号：US20120073976A1

公开(公告)日：2012-03-29

申请号：US12889232

申请日：2010-09-23

Applicant: Chen-An CHEN ,  Emmanuel Chua ABAS ,  Edmundo Anida DIVINO ,  Jake Randal G. ERMITA ,  Jose Francisco S. CAPULONG ,  Arnold Villamor CASTILLO ,  Diana Xiaobing MA

Inventor： Chen-An CHEN ,  Emmanuel Chua ABAS ,  Edmundo Anida DIVINO ,  Jake Randal G. ERMITA ,  Jose Francisco S. CAPULONG ,  Arnold Villamor CASTILLO ,  Diana Xiaobing MA

IPC: C25D5/00 ,  C25D17/06 ,  B32B38/00 ,  C25D17/08

CPC classification number: C25D17/005 ,  C25D17/001 ,  C25D17/004 ,  C25D17/08 ,  C25D17/10 ,  H05K3/0097 ,  H05K2203/0169 ,  H05K2203/0723

Abstract: One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及用于电镀多个基板的基板载体。 载体包括其上放置基板的非导电载体和嵌入载体主体内的导线。 多个导电夹附接部件以永久的方式连接到嵌入载体主体内的导线上。 多个接触夹以可移动的方式附接到夹子附件部分。 接触夹将基板固定在适当位置，并将导电线与基板导电连接。 还公开了其它实施例，方面和特征。

公开(公告)号：US06635577B1

公开(公告)日：2003-10-21

申请号：US09280462

申请日：1999-03-30

Applicant: John M. Yamartino ,  Peter K. Loewengardt ,  Kenlin Huang ,  Diana Xiaobing Ma

Inventor： John M. Yamartino ,  Peter K. Loewengardt ,  Kenlin Huang ,  Diana Xiaobing Ma

IPC: H01L21302

CPC classification number: H01J37/32339 ,  H01L21/32136

Abstract: A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.

Abstract translation: 一种消除由等离子体处理半导体晶片产生的电荷的方法，其包括以下步骤：在半导体晶片为等离子体的至少一部分时间内以可能导致形貌上依赖性的充电和曝光的方式等离子体处理半导体晶片 将半导体晶片加工成从半导体晶片去除电荷的颗粒，并减少与地形相关的充电。

公开(公告)号：US06569775B1

公开(公告)日：2003-05-27

申请号：US09506065

申请日：2000-02-17

Applicant: Peter K. Loewenhardt ,  John M. Yamartino ,  Hui Chen ,  Diana Xiaobing Ma

Inventor： Peter K. Loewenhardt ,  John M. Yamartino ,  Hui Chen ,  Diana Xiaobing Ma

IPC: H01L2100

CPC classification number: H01J37/32339 ,  H01L21/32136

Abstract: A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.

Abstract translation: 一种通过在晶片被处理期间将晶片或等离子体暴露于光子来改善半导体晶片的等离子体处理的方法。 该方法的一个实施方案包括以下步骤：蚀刻铝层，并且在蚀刻期间，将包含铝层的半导体晶片暴露于从层的表面去除氯化铜的光子，从而改善蚀刻工艺性能。

公开(公告)号：US06248250B1

公开(公告)日：2001-06-19

申请号：US08897436

申请日：1997-07-21

Applicant: Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Saizman ,  Peter K. Loewenhardt ,  Allen Zhao

Inventor： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Saizman ,  Peter K. Loewenhardt ,  Allen Zhao

IPC: H05H146

CPC classification number: H01J37/321

Abstract: The present invention adheres to an optimized coil-domed geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

Abstract translation: 本发明坚持优化的线圈圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶点高度范围和相对于圆顶顶点的特定晶片位置范围。

公开(公告)号：US06189484B1

公开(公告)日：2001-02-20

申请号：US09263642

申请日：1999-03-05

Applicant: Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

Inventor： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

IPC: C23C1600

CPC classification number: H01J37/321 ,  H01J37/32678

Abstract: A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

Abstract translation: 具有改进的等离子体和污染物控制的螺旋波，高密度RF等离子体反应器。 反应器包含明确定义的阳极电极，其被加热到聚合物冷凝温度以上，以确保否则会改变接地平面特性的材料沉积物不会在阳极上形成。 反应器还包含磁性桶，用于使用多个垂直取向的磁条或围绕室的水平取向的磁环将轴向限制在室中的等离子体。 反应器可以利用温度控制系统来维持室的表面上恒定的温度。

公开(公告)号：US6008140A

公开(公告)日：1999-12-28

申请号：US911878

申请日：1997-08-13

Applicant: Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

Inventor： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

IPC: C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/302

CPC classification number: H01L21/02071 ,  C23F4/00 ,  H01L21/32136

Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.

Abstract translation: 铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。 为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。 为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。 氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。 必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。 本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。 当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。 尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％ 。 最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

公开(公告)号：US5891348A

公开(公告)日：1999-04-06

申请号：US592821

申请日：1996-01-26

Applicant: Yan Ye ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Steve S. Y. Mak

Inventor： Yan Ye ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Steve S. Y. Mak

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/687 ,  H05H1/00

CPC classification number: H01L21/67069 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/68721 ,  Y10S156/915

Abstract: An apparatus (20) for uniformly processing substrates (25) having a surface with a center (80) and a peripheral edge (85). The apparatus (20) comprises (i) a process chamber (30) having a gas distributor (55) for distributing process gas in the process chamber (30); (ii) a support (75) for supporting a substrate (25) in the process chamber (30); (iii) a plasma generator for forming a plasma from the process gas in the process chamber (30); and (iv) a focus ring (90) in the process chamber (30). The focus ring (90) comprises (a) a wall (95) surrounding the substrate (25) to substantially contain the plasma on the substrate surface, and (b) a channel (100) in the wall (95). The channel (100) has an inlet (105) adjacent to, and extending substantially continuously around the peripheral edge (85) of the substrate surface. The inlet (105) of the channel (100) has a width w sized to allow a sufficient amount of process gas to flow into the channel (100) to maintain substantially equal processing rates at the center (80) and peripheral edge (85) of the substrate surface.

Abstract translation: 一种用于均匀地处理具有中心（80）和周缘（85）的表面的基板（25）的装置（20）。 设备（20）包括（i）具有用于在处理室（30）中分配处理气体的气体分配器（55）的处理室（30）。 （ii）用于在处理室（30）中支撑衬底（25）的支撑件（75）; （iii）用于在所述处理室（30）中从所述处理气体形成等离子体的等离子体发生器; 和（iv）处理室（30）中的聚焦环（90）。 聚焦环（90）包括（a）围绕基底（25）以在基底表面上基本上包含等离子体的壁（95），和（b）壁（95）中的通道（100）。 通道（100）具有与衬底表面的周边边缘（85）相邻并且基本上连续地延伸的入口（105）。 通道（100）的入口（105）具有宽度w，其尺寸允许足够量的处理气体流入通道（100），以在中心（80）和外围边缘（85）处保持基本上相等的处理速率， 的基板表面。