- 专利标题： MIS semiconductor device and method of fabricating the same
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申请号： US721537申请日： 1996-09-26
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公开(公告)号： US5891766A公开(公告)日： 1999-04-06
- 发明人: Shunpei Yamazaki , Yasuhiko Takemura
- 申请人： Shunpei Yamazaki , Yasuhiko Takemura
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX5-23286 19930118; JPX5-23288 19930118
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/41 ; H01L29/423 ; H01L29/78 ; H01L29/786 ; H01L21/00
摘要：
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
公开/授权文献
- US5122525A Bis-aza-bicyclic anxiolytic agents 公开/授权日：1992-06-16
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