发明授权
- 专利标题： Packaging for electronic power devices and applications using the packaging
- 专利标题（中）： 使用包装的电子电源设备和应用的包装
-
申请号： US570051申请日： 1995-12-11
-
公开(公告)号： US5892279A公开(公告)日： 1999-04-06
- 发明人: Ngon B. Nguyen
- 申请人： Ngon B. Nguyen
- 申请人地址： CA Los Angeles
- 专利权人： Northrop Grumman Corporation
- 当前专利权人： Northrop Grumman Corporation
- 当前专利权人地址： CA Los Angeles
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L23/473 ; H01L23/06 ; H01L23/10 ; H01L23/34 ; H01L23/52
摘要：
A packaging for high-power devices such as Insulated Gate Bipolar Transistors includes a direct bonded copper substrate (DBC), such as beryllium oxide (BeO), soldered directly to a heat generating surface of the high-power device. The direct bonded copper substrate (DBC) is, in turn, soldered directly to a liquid cooled heatsink (HS). The packaging improves the thermal management of the heat generated by the high-power device, and is applicable for use in a switching circuit for a 3-phase electric traction motor (M). The assembly also provides for improved wirebonding design in order to use each high-power device to its fullest.
公开/授权文献
- US5117738A Check valve and booster shell 公开/授权日：1992-06-02
信息查询
IPC分类:
