发明授权
- 专利标题： Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates
- 专利标题（中）： 绝缘基板上非晶硅膜的固相外延结晶
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申请号： US578809申请日： 1995-12-26
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公开(公告)号： US5893949A公开(公告)日： 1999-04-13
- 发明人: Tsu-Jae King , Jackson H. Ho
- 申请人： Tsu-Jae King , Jackson H. Ho
- 申请人地址： CT Stamford
- 专利权人： Xerox Corporation
- 当前专利权人： Xerox Corporation
- 当前专利权人地址： CT Stamford
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; C30B25/10
摘要：
A new process to form a polycrystalline silicon film using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to "seed" crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.
公开/授权文献
- USD328772S Arrow clip quiver for an archery bow 公开/授权日：1992-08-18
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