发明授权
- 专利标题： Method for fabricating a capped gate conductor
- 专利标题（中）： 制造封盖栅导体的方法
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申请号： US652130申请日： 1996-05-23
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公开(公告)号： US5897349A公开(公告)日： 1999-04-27
- 发明人: Paul David Agnello
- 申请人： Paul David Agnello
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/8238 ; H01L27/092 ; H01L29/423 ; H01L29/49
摘要：
A gate structure in a CMOS is fabricated wherein the encapsulation material is self-aligned with the gate conductor and the gate channel. The gate conductor is formed subsequent to the device doping and heat cycles for formulation of the source and drain junction, and is preferably of greater width than the gate.
公开/授权文献
- US5131491A Descent controller 公开/授权日：1992-07-21
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