发明授权
- 专利标题: Multi-chip device and method of fabrication employing leads over and under processes
- 专利标题(中): 多芯片器件和制造方法采用超导和过程工艺
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申请号: US911501申请日: 1997-08-14
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公开(公告)号: US5898220A公开(公告)日: 1999-04-27
- 发明人: Michael B. Ball
- 申请人: Michael B. Ball
- 申请人地址: ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: ID Boise
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L23/495 ; H01L23/50 ; H01L25/065 ; H01L25/07 ; H01L23/14
摘要:
A device and method for increasing integrated circuit density comprising a pair of superimposed dies with a plurality of leads extending between the dies. The device is produced by providing a lower die which has a plurality of bond pads on a face side of the lower die. A layer of dielectric or insulative shielding is applied over the lower die face side. Leads are applied to an upper surface of the shielding layer. A plurality of lower die bond wires is attached between the lower die bond pads and an upper surface of their respective leads. A second layer of dielectric or insulative shielding is applied over the leads and the portion of the lower die bond wires extending over the lead upper surfaces. A back side of the upper die is adhered to an upper surface of the second shielding layer. A plurality of upper die bond wires are attached between a plurality of bond pads on a face side of the upper die and the upper surface of their respective leads.