发明授权
- 专利标题： Method for fabricating flash memory cells
- 专利标题（中）： 制造闪存单元的方法
-
申请号： US859259申请日： 1997-05-20
-
公开(公告)号： US5899718A公开(公告)日： 1999-05-04
- 发明人: Hwi-Huang Chen , Joe Ko , Gary Hong
- 申请人： Hwi-Huang Chen , Joe Ko , Gary Hong
- 申请人地址： TWX
- 专利权人： United Semiconductor Corp.
- 当前专利权人： United Semiconductor Corp.
- 当前专利权人地址： TWX
- 优先权： TWX86103097 19970313
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8247
摘要：
A method for fabricating flash memory cells having a DDD structure that prevents leakage current during data erasure, that does not require a high temperature drive-in process, and that easily combines with other logic processes. The method for fabricating the flash memory cells utilizes ion implantation through contact windows to establish heavily doped source and drain regions inside previously formed deeply doped source and drain regions to construct the DDD structure.
公开/授权文献
- US4352416A Cast iron railroad brake shoes 公开/授权日：1982-10-05