发明授权
US5904505A Process for producing encapsulated semiconductor device having metal
foil material covering and metal foil
失效
用于制造具有金属箔材料覆盖物和金属箔的封装半导体器件的方法
- 专利标题： Process for producing encapsulated semiconductor device having metal foil material covering and metal foil
- 专利标题（中）： 用于制造具有金属箔材料覆盖物和金属箔的封装半导体器件的方法
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申请号： US977053申请日： 1997-11-25
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公开(公告)号： US5904505A公开(公告)日： 1999-05-18
- 发明人: Yuji Hotta , Hitomi Shigyo , Shinichi Ohizumi , Seiji Kondoh
- 申请人： Yuji Hotta , Hitomi Shigyo , Shinichi Ohizumi , Seiji Kondoh
- 申请人地址： JPX Osaka
- 专利权人： Nitto Denko Corporation
- 当前专利权人： Nitto Denko Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-159796 19940712; JPX7-33677 19950222
- 主分类号： H01L23/28
- IPC分类号： H01L23/28 ; H01L21/56 ; H01L23/00 ; H01L23/10 ; H01L23/16 ; H01L23/31 ; H01L23/544 ; H01L23/58
摘要：
A process for producing a metal foil-covered semiconductor device. The metal foil material is one which is, in molding a resin for encapsulating a semiconductor element using a mold, temporarily fixed on a surface of a cavity of the mold, and is adhered on a surface of a semiconductor device by injecting the encapsulating resin into the mold and molding the resin, wherein a contact angle of the face of the metal foil material which is in contact with the encapsulating resin during molding, to water is 110.degree. or less.
公开/授权文献
- US5301672A Radiological diagnostics system employing a contrast agent 公开/授权日：1994-04-12
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