发明授权
US5905280A Capacitor structures, DRAM cell structures, methods of forming
capacitors, methods of forming DRAM cells, and integrated circuits
incorporating capacitor structures and DRAM cell structures
失效
电容器结构，DRAM单元结构，形成电容器的方法，形成DRAM单元的方法以及集成电容器结构和DRAM单元结构的集成电路
- 专利标题： Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures
- 专利标题（中）： 电容器结构，DRAM单元结构，形成电容器的方法，形成DRAM单元的方法以及集成电容器结构和DRAM单元结构的集成电路
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申请号： US798241申请日： 1997-02-11
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公开(公告)号： US5905280A公开(公告)日： 1999-05-18
- 发明人: Yauh-Ching Liu , David Y. Kao
- 申请人： Yauh-Ching Liu , David Y. Kao
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/768 ; H01L21/8242 ; H01L27/108
摘要：
The invention includes a construction comprising: a) an opening extending through an insulative layer to a node location; b) a conductive spacer within the opening and narrowing at least a portion of the opening; the conductive spacer having inner and outer surfaces; c) a storage node layer in connecting with the node location and extending along both of the inner and outer surfaces of the conductive spacer, the storage node layer and conductive spacer together forming a capacitor storage node; and d) a dielectric layer and a cell plate layer operatively proximate the storage node.
公开/授权文献
- US5355327A Automated statistical data collection system 公开/授权日：1994-10-11
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