发明授权
- 专利标题： Projection exposure method in which mask patterns are imaged on photosensitive substrates with adjustment of illumination and projection parameters corresponding to the mask pattern
- 专利标题（中）： 投影曝光方法，其中通过调整与掩模图案相对应的照明和投影参数来调整光敏基片上的掩模图案
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申请号： US614899申请日： 1996-03-13
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公开(公告)号： US5912727A公开(公告)日： 1999-06-15
- 发明人: Hidemi Kawai
- 申请人： Hidemi Kawai
- 申请人地址： JPX Tokyo
- 专利权人： Nikon Corporation
- 当前专利权人： Nikon Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-353754 19911218
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/027 ; H01L21/30 ; G03B27/42 ; G03B27/54 ; G03B27/72
摘要：
An exposure method of illuminating a pattern on a mask by a light beam from an illuminating optical system and exposing the image of the pattern onto a photosensitive substrate through a projection optical system comprises the steps of discriminating the kind of the mask, setting the state of at least one of the field stop of the illuminating optical system, the aperture stop of the illuminating system and the aperture stop of the projection optical system in conformity with the discriminated kind of the mask, and projecting the image of the pattern on the mask onto a predetermined area of the photosensitive substrate.
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