发明授权
- 专利标题: Porous semiconductor material
- 专利标题(中): 多孔半导体材料
-
申请号: US640798申请日: 1996-06-05
-
公开(公告)号: US5914183A公开(公告)日: 1999-06-22
- 发明人: Leigh Trevor Canham
- 申请人: Leigh Trevor Canham
- 申请人地址: GBX Hants
- 专利权人: The Secretary of State for Defence in Her Brittanic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
- 当前专利权人: The Secretary of State for Defence in Her Brittanic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
- 当前专利权人地址: GBX Hants
- 优先权: GBX9324963 19931206; GBX9418341 19940912
- 主分类号: C04B38/00
- IPC分类号: C04B38/00 ; C25F3/12 ; H01L21/3063 ; H01L29/16 ; H01L33/34 ; B32B3/26 ; F26B5/04 ; H01L21/02 ; H01L31/12
摘要:
Porous semiconductor material in the form of at least partly crystalline silicon is produced with a porosity in excess of 90% determined gravimetrically, and voids, crazing and peeling are substantially not observable by scanning electron microscopy at a magnification of 7,000. The porous silicon is dried by supercritical drying. The silicon material has good luminescence properties together with good morphology and crystallinity.
公开/授权文献
- US5162441A Sealing part for hydraulic cylinder 公开/授权日:1992-11-10