公开(公告)号：US11575067B2

公开(公告)日：2023-02-07

申请号：US16647940

申请日：2019-05-13

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Zhao Kang

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L33/34 ,  H01L33/50 ,  H01L33/62

摘要： A display substrate, a display apparatus, and a manufacturing method for the display substrate are provided. The display substrate includes: a substrate and a plurality of pixel units arranged in an array on the substrate; the pixel unit includes a light emitting diode, a connecting metal pattern, and a thin film transistor arranged in sequence along a direction away from the substrate; the connecting metal pattern is conductively connected to a top electrode of the light emitting diode; an active layer of the thin film transistor is insulated and spaced from the connecting metal pattern, and the drain of the thin film transistor is conductively connected to the connecting metal pattern.

公开(公告)号：US11430374B2

公开(公告)日：2022-08-30

申请号：US16857362

申请日：2020-04-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC分类号： G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

摘要： Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US11355667B2

公开(公告)日：2022-06-07

申请号：US16380091

申请日：2019-04-10

申请人： ATOMERA INCORPORATED

发明人： Robert John Stephenson

IPC分类号： G02B6/12 ,  H01L27/12 ,  H01L29/15 ,  G02F1/017 ,  H01L33/06 ,  H01L23/522 ,  G02B6/134 ,  H01L27/15 ,  H01L33/00 ,  H01L33/34 ,  H01L33/58 ,  H01L21/02 ,  H01L31/0352 ,  H01L33/04

摘要： A method for making a semiconductor device may include forming a plurality of waveguides on a substrate, and forming a superlattice overlying the substrate and waveguides. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an active device layer on the superlattice comprising at least one active semiconductor device.

公开(公告)号：US11309389B2

公开(公告)日：2022-04-19

申请号：US14648609

申请日：2013-11-21

申请人： LX Semicon Co., Ltd.

发明人： Seok Min Kang ,  Ji Hye Kim ,  Heung Teak Bae

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L29/06 ,  H01L29/872 ,  H01L29/78 ,  H01L29/08 ,  H01L33/34 ,  H01L33/32 ,  H01L29/32 ,  H01L33/02 ,  H01L33/00

摘要： An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.

公开(公告)号：US20210384032A1

公开(公告)日：2021-12-09

申请号：US17410427

申请日：2021-08-24

申请人： AKHAN Semiconductor, Inc.

发明人： Adam Khan

IPC分类号： H01L21/04 ,  H01L21/205 ,  H01L29/16 ,  H01L29/78 ,  H01L29/868 ,  H01L21/02 ,  H01L33/34 ,  H01L21/3065 ,  H01L31/028 ,  H01L29/66 ,  H01L29/06

摘要： Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

公开(公告)号：US20210222837A1

公开(公告)日：2021-07-22

申请号：US17130408

申请日：2020-12-22

申请人： Michael A. TISCHLER ,  Vladimir ODNOBLYUDOV ,  David KEOGH

发明人： Michael A. TISCHLER ,  Vladimir ODNOBLYUDOV ,  David KEOGH

IPC分类号： F21K9/238 ,  H05B45/37 ,  H05B45/00 ,  H05B47/11 ,  F21K9/233 ,  F21K9/64 ,  H01L27/15 ,  H01L33/50 ,  F21V29/70 ,  F21K9/235 ,  F21K9/237 ,  F21V3/00 ,  F21V9/08 ,  F21V15/01 ,  F21V23/00 ,  F21V23/06 ,  H01L25/075 ,  H01L27/32 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34 ,  H01L33/58 ,  H01L33/60 ,  H01L51/50 ,  H04N1/028

摘要： In various embodiments, lighting systems include a carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs), each of which has at least two electrical contacts electrically connected to conductive elements.

公开(公告)号：US20210183301A1

公开(公告)日：2021-06-17

申请号：US16857362

申请日：2020-04-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junee CHOI ,  Kiho Kong ,  Nakhyun Kim ,  Junghun Park ,  Jinjoo Park ,  Joohun Han

IPC分类号： G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

摘要： Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US11018059B2

公开(公告)日：2021-05-25

申请号：US16545677

申请日：2019-08-20

申请人： DISCO CORPORATION

发明人： Kazuma Sekiya

IPC分类号： H01L21/78 ,  B23K26/00 ,  B23K26/082 ,  H01L21/268 ,  H01L33/34 ,  H01L33/00 ,  H01L21/304 ,  B23K101/40

摘要： An SiC substrate processing method for producing an SiC substrate from an SiC ingot. The SiC substrate processing method includes a separation layer forming step of setting a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot and next applying the laser beam LB to the SiC ingot to thereby form a separation layer for separating the SiC substrate from the SiC ingot, a substrate attaching step of attaching a substrate to the upper surface of the SiC ingot, and a separating step of applying an external force to the separation layer to thereby separate the SiC substrate with the substrate from the SiC ingot along the separation layer.

公开(公告)号：US11011672B2

公开(公告)日：2021-05-18

申请号：US16786004

申请日：2020-02-10

申请人： Samsung Electronics Co., Ltd.

发明人： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC分类号： H01L33/04 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

摘要： A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US20210098651A1

公开(公告)日：2021-04-01

申请号：US16760863

申请日：2018-03-12

申请人： Institute of Semiconductors, Chinese Academy of Sciences

发明人： Junwei Luo ,  Linding Yuan ,  Shushen Li

IPC分类号： H01L33/34 ,  H01L33/00 ,  H01L33/18 ,  H01L33/02

摘要： The present disclosure provides a silicon-based direct band gap light-emitting material compatible with the CMOS fabrication process, and a preparation method thereof. The method comprises steps of: preparing a silicon-based material, wherein the silicon-based material is a germanium material or a silicon-germanium alloy; filling some of lattice interstitial sites of the silicon-based material with noble gas atoms and/or other atoms with a low atomic number, so as to expand the lattice volume in order to transform the band structure from indirect band gap to direct band gap, thereby obtaining a silicon-based direct band gap light-emitting material. The present disclosure also provides a silicon-based light-emitting device. The preparation method of the present disclosure is compatible with CMOS integrated circuit processes, and realizes direct band gap light-emission from germanium and silicon germanium alloy materials with a light-emitting efficiency comparable to that of direct band gap Group III-V materials such as InP and GaAs, thus offering a completely new solution for on-chip light sources required for silicon- or germanium-based optoelectronic integration technologies.