发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US660479申请日: 1996-06-07
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公开(公告)号: US5915179A公开(公告)日: 1999-06-22
- 发明人: Hiroki Etou , Kazunori Ohno , Takaaki Saito , Naofumi Tsuchiya , Toshinari Utsumi
- 申请人: Hiroki Etou , Kazunori Ohno , Takaaki Saito , Naofumi Tsuchiya , Toshinari Utsumi
- 申请人地址: JPX Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX7-143369 19950609; JPX8-133807 19960528
- 主分类号: H01L29/872
- IPC分类号: H01L29/872 ; H01L21/336 ; H01L21/8234 ; H01L27/04 ; H01L27/06 ; H01L27/088 ; H01L29/06 ; H01L29/47 ; H01L29/78
摘要:
In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.
公开/授权文献
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