发明授权
- 专利标题： Semiconductor device having ohmic electrode and method of manufacturing the same
- 专利标题（中）： 具有欧姆电极的半导体器件及其制造方法
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申请号： US789082申请日： 1997-01-27
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公开(公告)号： US5917243A公开(公告)日： 1999-06-29
- 发明人: Tsuyoshi Tojyo , Futoshi Hiei
- 申请人： Tsuyoshi Tojyo , Futoshi Hiei
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPXP06-320716 19941222
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01S5/042 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer containing Ni, Sn and AuGe is formed on one main surface of the n-type GaAs. In the second process, the n-type GaAs is subjected to a heat treatment at a temperature which is equal to or higher than 190.degree. C. and equal to or lower than 300.degree. C. Thus, the ohmic electrode is formed on the one main surface of the n-type GaAs.
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