发明授权
- 专利标题: Read-only memory cell array and process for manufacturing it
- 专利标题(中): 只读存储单元阵列及其制造过程
-
申请号: US913332申请日: 1997-09-11
-
公开(公告)号: US5920099A公开(公告)日: 1999-07-06
- 发明人: Wolfgang Krautschneider , Lothar Risch , Franz Hofmann
- 申请人: Wolfgang Krautschneider , Lothar Risch , Franz Hofmann
- 申请人地址: DEX Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DEX Munich
- 优先权: DEX19510042 19950320
- 主分类号: H01L21/8246
- IPC分类号: H01L21/8246 ; H01L27/112
摘要:
A read-only memory cell array has a plurality of individual memory cells which each have a MOS transistor and which are arranged in rows running in parallel. In this context, adjacent rows run alternately at the bottom of the longitudinal trenches (6) and between adjacent longitudinal trenches (6) respectively and are insulated with respect to one another. The read-only memory cell array can be manufactured by self-aligning process steps with an area of 2 F.sup.2 (F: minimum structure size) being required per memory cell.
公开/授权文献
- US5261380A Crankcase ventilation system for automotive engine 公开/授权日:1993-11-16