Invention Grant
US5920980A Method of making a soft adjacent layer (SAL) magnetoresistive (MR)
sensor element with electrically insulated soft adjacent layer (SAL)
失效
制造具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件的方法
- Patent Title: Method of making a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)
- Patent Title (中): 制造具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件的方法
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Application No.: US810060Application Date: 1997-03-05
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Publication No.: US5920980APublication Date: 1999-07-13
- Inventor: Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
- Applicant: Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
- Applicant Address: CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: CA Milpitas
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G11B5/39 ; G11B5/42
Abstract:
A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.
Public/Granted literature
- US5252669A Grafted, thermoplastic, waterborne polymer and coating composition Public/Granted day:1993-10-12
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