Reliable low resistance strap for trench storage DRAM cell using selective epitaxy

Invention Grant

US5923971A Reliable low resistance strap for trench storage DRAM cell using selective epitaxy 失效

Title translation: 使用选择性外延的沟槽存储DRAM单元的可靠的低电阻带

Please log in to see more content

Patent Title: Reliable low resistance strap for trench storage DRAM cell using selective epitaxy
Patent Title (中): 使用选择性外延的沟槽存储DRAM单元的可靠的低电阻带
Application No.: US731940

Application Date: 1996-10-22
Publication No.: US5923971A

Publication Date: 1999-07-13
Inventor: Herbert L. Ho , Andre R. LeBlanc , Jack A. Mandelman , Radhika Srinivasan
Applicant: Herbert L. Ho , Andre R. LeBlanc , Jack A. Mandelman , Radhika Srinivasan
Applicant Address: NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: NY Armonk
Main IPC: H01L21/8242
IPC: H01L21/8242

Reliable low resistance strap for trench storage DRAM cell using
selective epitaxy

Abstract:

Strap resistance, surface strap shorts and wordline capacitance can be reduced by providing a selectively grown silicon strap which tapers away from spacer nitride and has less contact with spacer nitride. In addition the strap is optionally doped with an arsenic implant which reduces resistance.

Abstract(Chinese):

通过提供选择性地生长的硅带，可以减少带状电阻，表面带短路和字线电容，该带从间隔氮化物逐渐变细并且与间隔氮化物接触较少。此外，带可选地掺杂有降低电阻的砷注入。

Public/Granted literature

USD333528S Adjustable lamp Public/Granted day:1993-02-23

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）