发明授权
- 专利标题： Method for manufacturing thin film
- 专利标题（中）： 薄膜制造方法
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申请号： US782811申请日： 1997-01-13
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公开(公告)号： US5927994A公开(公告)日： 1999-07-27
- 发明人: Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
- 申请人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-023288 19960117
- 主分类号： G03G5/08
- IPC分类号： G03G5/08 ; C23C16/50 ; C23C16/54 ; H01J37/32 ; H01L21/205 ; H01L31/04 ; H01L31/20 ; H01L21/20 ; H01L21/36
摘要：
A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.
公开/授权文献
- US4657848A Heat-developable light-sensitive material 公开/授权日：1987-04-14
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