公开(公告)号：US5927994A

公开(公告)日：1999-07-27

申请号：US782811

申请日：1997-01-13

申请人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.

摘要翻译： 描述了通过等离子体CVD制造薄膜的方法。 该方法包括以这样的方式向功率电极供电，使得位于等离子体放电空间中的功率施加电极的等离子体放电的自偏压相对于接地电极为正电位。

公开(公告)号：US6153013A

公开(公告)日：2000-11-28

申请号：US800512

申请日：1997-02-14

申请人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： C23C16/44 ,  C23C16/54 ,  H01L31/0392 ,  H01L31/20 ,  C23C16/06

CPC分类号： C23C16/4409 ,  C23C16/44 ,  C23C16/545 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.

摘要翻译： 本发明的沉积膜形成装置是一种用于形成沉积膜的装置，同时连续地通过带状构件穿过连接件的多个真空室的内部并在其上重叠地形成多个不同的薄膜 通过等离子体辅助CVD形成带状构件的表面，其中真空室被固定到用于支撑真空室的支架上，以及用于放松在真空中产生的带状构件的传送方向上作用的应力的机构 在每个真空室和每个连接构件之间设置由于真空室的热膨胀而引起的膨胀和收缩的作用的腔室。

公开(公告)号：US06530341B1

公开(公告)日：2003-03-11

申请号：US09257027

申请日：1999-02-25

申请人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H05H100

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.

摘要翻译： 本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积 （阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括 结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地 通过离子轰击给沉积膜表面赋予能量。 因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。

公开(公告)号：US5897332A

公开(公告)日：1999-04-27

申请号：US717629

申请日：1996-09-23

申请人： Tadashi Hori ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Kohda ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Kohda ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/206 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric conversion element containing at least one pin junction, wherein a diffusion preventing layer is provided between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, and the diffusion preventing layer is deposited such that deposition temperature differs in its thickness direction.

摘要翻译： 一种制造包含至少一个pin结的光电转换元件的方法，其中在n型层和i型层之间和/或i型层和p型层之间设置有扩散防止层， 并且淀积温度在其厚度方向上不同而沉积扩散防止层。

公开(公告)号：US06162988A

公开(公告)日：2000-12-19

申请号：US923259

申请日：1997-09-04

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US20050161077A1

公开(公告)日：2005-07-28

申请号：US10625041

申请日：2003-07-23

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.

摘要翻译： 一种用于通过等离子体CVD法有效且连续地大量生产光电元件的装置，其具有优异的电流 - 电压特性和优异的光电转换效率。 该装置具有第一室，其中原料气体从上到下流动。 第二室通过分离路径连接到第一室，并且使原料气体沿着长基板的移动方向从底部向上流动。

公开(公告)号：US06368944B1

公开(公告)日：2002-04-09

申请号：US09664219

申请日：2000-09-18

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US6159763A

公开(公告)日：2000-12-12

申请号：US927413

申请日：1997-09-10

申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/076 ,  C23C16/5096 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.

摘要翻译： 提供一种形成光电元件的方法，其中在用于形成具有阴极电极结构的半导体薄膜的器件中形成p型半导体层，其中在等离子体放电空间中，阴极的表面积 等离子体放电空间中的电极大于带状部件和阳极电极的表面积的总和，所述阴极电极在辉光放电的激发时的电位相对于带状部件是正的， 阳极电极和部分地构成阴极电极的隔离电极构成为具有翅片或块的形式，并且在用于形成具有阴极电极结构的半导体薄膜的器件中形成n型半导体层 电容耦合，平行板型。 由此，可以制造出具有高质量且均匀性大的光电元件，较少的缺陷，优异的光劣化性能和改善的串联电阻，从而提供大量的高生产率和良好的再现性。

公开(公告)号：US06399411B1

公开(公告)日：2002-06-04

申请号：US09594563

申请日：2000-06-15

申请人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

IPC分类号： H01L2100

CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

摘要： A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.

摘要翻译： 一种用于形成非单晶半导体薄膜的方法和使用具有由成膜室壁和带状衬底围成的成膜空间的成膜室的装置的光电器件。 在该装置中设置有围绕沉积室壁的外部室。 当带状基板沿纵向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以引起微波 等离子体，从而在带状基板的表面上形成非单晶半导体薄膜。 覆盖沉积室壁的外表面的一部分的冷却机构和升温机构提供温度控制。

公开(公告)号：US6159300A

公开(公告)日：2000-12-12

申请号：US990915

申请日：1997-12-15

申请人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

摘要： An apparatus for forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall is provided. While the beltlike substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the beltlike substrate. A cooling mechanism and a temperature-increasing mechanism are provided to cover a part of an outside surface of the deposition chamber wall. An apparatus for forming a non-single-crystal semiconductor thin film where the gas supply device comprises a gas manifold set apart from the deposition chamber wall is another embodiment.

摘要翻译： 提供了一种用于形成非单晶半导体薄膜的装置，其包括具有由成膜室壁和带状基板包围的成膜空间的成膜室和围绕沉积室壁的外部室。 当带状基板沿长度方向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以诱导微波等离子体， 从而在带状基板的表面上形成非单晶半导体薄膜。 提供冷却机构和升温机构以覆盖沉积室壁的外表面的一部分。 形成非单晶半导体薄膜的装置是另一实施例，其中气体供应装置包括与沉积室壁分开的气体歧管。