发明授权
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US874299申请日: 1997-06-13
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公开(公告)号: US5929466A公开(公告)日: 1999-07-27
- 发明人: Yasuo Ohba , Ako Hatano
- 申请人: Yasuo Ohba , Ako Hatano
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX6-038157 19940309; JPX7-000704 19950106
- 主分类号: H01L29/201
- IPC分类号: H01L29/201 ; H01L29/205 ; H01L31/0304 ; H01L33/00 ; H01L33/32 ; H01S5/02 ; H01S5/042 ; H01S5/323
摘要:
A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and A1.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
公开/授权文献
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