Invention Grant
- Patent Title: Defect induced buried oxide (DIBOX) for throughput SOI
- Patent Title (中): 缺陷诱导埋氧（DIBOX）用于吞吐量SOI
-
Application No.: US995585Application Date: 1997-12-22
-
Publication No.: US5930643APublication Date: 1999-07-27
- Inventor: Devendra Kumar Sadana , Joel P. de Souza
- Applicant: Devendra Kumar Sadana , Joel P. de Souza
- Applicant Address: NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: NY Armonk
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/762
Abstract:
A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent to the stable defect region; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising said semiconductor substrate having said DIBOX is also provided herein.
Public/Granted literature
- US5298643A Aryl imidate activated polyalkylene oxides Public/Granted day:1994-03-29
Information query
IPC分类:
