发明授权
- 专利标题: Cleaning process for harmful gas
- 专利标题(中): 清洁有害气体的过程
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申请号: US61976申请日: 1998-04-17
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公开(公告)号: US5935540A公开(公告)日: 1999-08-10
- 发明人: Kenji Otsuka , Youji Nawa
- 申请人: Kenji Otsuka , Youji Nawa
- 申请人地址: JPX Tokyo
- 专利权人: Japan Pionics Co., Ltd.
- 当前专利权人: Japan Pionics Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-123347 19970425
- 主分类号: B01D53/86
- IPC分类号: B01D53/86 ; B01J8/00 ; B01D53/54 ; B01D53/68
摘要:
There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gas containing at least one member selected from the group consisting of nitrogen fluorides, tungsten fluorides, silicon fluorides, hydrogen fluoride and fluorine, especially nitrogen trifluoride into contact with a cleaning agent comprising stannous oxide as an effective ingredient at a temperature of 200.degree. C. at the lowest. The above process makes it possible to clean the harmful gas in a high performance at a relatively low temperature without by-producing a harmful gas or a gas with a fear of causing environmental pollution.
公开/授权文献
- USD404530S Cosmetic box 公开/授权日:1999-01-19
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