- 专利标题： Method for fabrication of and apparatus for use as a semiconductor photomask
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申请号： US796650申请日： 1997-03-03
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公开(公告)号： US5935734A公开(公告)日： 1999-08-10
- 发明人: Christophe Pierrat
- 申请人： Christophe Pierrat
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： G03F1/30
- IPC分类号： G03F1/30 ; G03F7/00 ; G03F7/40 ; G03F1/08
摘要：
A method for fabricating photomasks including forming a resist layer located over a substrate, and heating the substrate at a temperature greater than the glass transition temperature of the resist, such that the resist layer flows. In this manner, defects such as pinholes within the resist layer are reduced.
公开/授权文献
- US5152631A Positive-engaging coupling for a portable handheld tool 公开/授权日：1992-10-06