A non-volatile memory device is disclosed in which a pair of two adjacent memory cell strings are commonly connected to one bit line and the memory cell strings are selectively driven to obtain a relatively wide pitch margin between two bit lines. The device has a conductive plate line which is located along each memory cell string or a pair of memory cell strings to drive memory cells thereof with a relatively low program voltage to a word line. The memory device comprises a plurality of memory cell strings which are arranged in parallel with one another and each of which extends in the same direction as a bit line 12, and a pair of two adjacent memory cell strings 11a and 11b are commonly connected to the bit line 12. The memory device also comprises a string selector for selecting either the first string 11a or the second string 11b in response to signals from string select lines SSL1 and SSL2, and a plurality of plate lines PLa or 21a and PLb or 21b which are respectively arranged on the first and second strings 11a and 11b. In the memory cell, if voltages having different levels are applied to the control gate of a memory cell of the string selected thus and the plate line, at least more than two coupling voltages are induced to a floating gate of a corresponding memory cell so that two bits of information can be stored in and read out of one memory cell. The memory device has a cell structure in which a pair of two adjacent memory cell strings are commonly connected to one bit line, so that margin width between two bit lines, i.e., a bit line pitch can be relatively widely obtained.