发明授权
- 专利标题： Method of manufacturing a semiconductor comprising an oxygen-containing silicon wafer
- 专利标题（中）： 制造包含含氧硅晶片的半导体的方法
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申请号： US381401申请日： 1995-01-31
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公开(公告)号： US5940722A公开(公告)日： 1999-08-17
- 发明人: Naoyoshi Tamura
- 申请人： Naoyoshi Tamura
- 申请人地址： JPX Kanagawa
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX6-038031 19940309
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B29/06 ; C30B33/02 ; H01L21/208 ; H01L21/28 ; H01L21/322 ; H01L21/324
摘要：
Si melt is prepared in a crucible with a quartz surface, the crucible and a seed crystal are rotated at a relative speed of 30 rpm or more to melt quartz into Si melt, and a Si single crystal ingot is grown to have an interstitial oxygen concentration of about 1.5.times.10.sup.18 atoms/cm.sup.3 or more. A wafer is sliced from the ingot and subjected to a heat treatment in a hydrogen atmosphere at 1200.degree. C. for one hour. Thereafter, a thermal oxide film is formed on the surface of a wafer, and a MOS transistor or capacitor is formed by using this thermal oxide film.
公开/授权文献
- US4511936A Switch and optical sensor assembly for recorder 公开/授权日：1985-04-16
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