发明授权
- 专利标题： Methods of heat-treating semiconductor wafers
- 专利标题（中）： 热处理半导体晶片的方法
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申请号： US978937申请日： 1997-11-26
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公开(公告)号： US5944889A公开(公告)日： 1999-08-31
- 发明人: Jae-guen Park , Gon-sub Lee , Kyoo-chul Cho , Ho-kyoon Chung
- 申请人： Jae-guen Park , Gon-sub Lee , Kyoo-chul Cho , Ho-kyoon Chung
- 申请人地址： KRX
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX
- 优先权： KRX96-60025 19961129
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/322 ; C30B25/20
摘要：
With a view to optimizing the donor killing process performed in the semiconductor wafer fabricating process, a heat-treating operation is performed in a thermal furnace above at least 900 .degree. C. for a predetermined time so that growth of the initial oxygen precipitates, induced into the crystal lattices during single-crystal growth, is suppressed. Thus, the oxygen precipitates are easily suppressed, irrespective of the concentration of the initial oxygen, so that the yield of the semiconductor device is improved