- 专利标题： Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity
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申请号： US797678申请日： 1997-01-31
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公开(公告)号： US5945735A公开(公告)日： 1999-08-31
- 发明人: Laertis Economikos , Lester Wynn Herron , Mario J. Interrante
- 申请人： Laertis Economikos , Lester Wynn Herron , Mario J. Interrante
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L23/02
- IPC分类号： H01L23/02 ; H01L23/10 ; H01L23/08 ; H01L23/48
摘要：
The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.
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