发明授权
US5946596A Method for preventing polycide line deformation by polycide hardening
失效
通过多硅化物硬化防止多杀线变形的方法
- 专利标题： Method for preventing polycide line deformation by polycide hardening
- 专利标题（中）： 通过多硅化物硬化防止多杀线变形的方法
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申请号： US734624申请日： 1996-10-18
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公开(公告)号： US5946596A公开(公告)日： 1999-08-31
- 发明人: Tse-Liang Ying
- 申请人： Tse-Liang Ying
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/768 ; H01L21/44
摘要：
The present invention provides a method for preventing a polycide line situated between two dielectric layers from deformation during a reflow process for one of the dielectric layers by annealing the polycide line and thereby increasing its hardness prior to the reflow process being conducted. The annealing process can be carried out either before or after the polycide line is formed at an annealing temperature in the range between about 700.degree. C. and about 1000.degree. C. in a furnace or by a rapid thermal process.
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