A method and an apparatus for electron beam exposure convenient to be applied to the hybrid exposure of a pattern with ultra-fine design rules, a method of electron beam exposure comprises: a primary field dividing step (S2) for dividing a second pattern to be drawn into a plurality of fields having a size whereon an electron beam can be radiated with negligible biasing distortion; a primary fitting step for performing a fitting process (S3) for each of the plurality of fields, wherein cubic compensation equations are adjusted to fit compensation values with the optical distortion, and a fitting error after compensation being calculated; a primary field dividing step for performing a field dividing process (S5) for each of the plurality of fields whereof the fitting error is larger than a predetermined allowable range, wherein a concerning field is divided into a pair of sub fields and the fitting process is performed for each of the sub fields; and a sub field dividing step for repeating the field dividing process for each of the sub fields, the fitting error thereof larger than the predetermined allowable range and a size thereof larger than a predetermine minimum size.