公开(公告)号：US20100103392A1

公开(公告)日：2010-04-29

申请号：US12588618

申请日：2009-10-21

申请人： Yoshinori Matsui ,  Naka Onoda

发明人： Yoshinori Matsui ,  Naka Onoda

IPC分类号： G03B27/52

CPC分类号： G03B27/52 ,  G03F7/70341 ,  G03F7/70925

摘要： The immersion exposure device cleaning method according to the invention includes: placing a dummy wafer onto a stage of the immersion exposure device; and moving the stage while maintaining an immersion solution between the dummy wafer and a projector lens. The dummy wafer includes a substrate and an adsorption area that is formed on the substrate and has higher adsorption power for particles suspended in the supplied immersion solution than the substrate has for the particles.

摘要翻译： 根据本发明的浸渍曝光装置清洁方法包括：将伪晶片放置在浸没曝光装置的台上; 并且在保持虚拟晶片和投影透镜之间的浸没溶液的同时移动台。 伪晶片包括基板和形成在基板上的吸附区域，并且对于悬浮在所提供的浸渍溶液中的颗粒，对于颗粒而言，具有较高的吸附能力。

公开(公告)号：US06198109B1

公开(公告)日：2001-03-06

申请号：US09146531

申请日：1998-09-03

申请人： Naka Onoda

发明人： Naka Onoda

IPC分类号： G02B500

CPC分类号： H01J37/09 ,  H01J2237/0453 ,  H01J2237/31794

摘要： There is provided an apparatus used for forming a pattern on a substrate by photolithography with electron beams, the apparatus including (a) an aperture formed with at least one opening through which electron beams are to pass, and (b) a holder for fixedly supporting the aperture therewith by means an adhesive, at least one of surfaces of the aperture and the holder at which the aperture is adhesively fixed to the holder, being formed with at least one groove for excessive portion of the adhesive to flow in. When an aperture is fixed onto a holder with an adhesive, an adhesive may be excessively applied on a surface of the aperture or holder. However, in accordance with the above-mentioned apparatus, since excessive adhesive is pooled in the groove, it is possible to avoid the excessive adhesive from being forced out to the opening of the aperture, and thus, it is possible to avoid forming an incorrect pattern on a photoresist film.

摘要翻译： 提供了一种用于通过光刻用电子束在基板上形成图案的装置，该装置包括（a）形成有至少一个电子束要通过的开口的孔，（b）用于固定支撑的保持器 通过粘合剂的孔，孔和保持器的至少一个表面，孔在该位置处粘合地固定到保持器上，形成有至少一个用于粘合剂的过多部分流入的凹槽。当孔 用粘合剂固定在支架上，粘合剂可能被过度地施加在孔或保持器的表面上。 然而，根据上述装置，由于在槽中汇集了过多的粘合剂，所以可以避免过多的粘合剂被迫流出到孔的开口，因此可以避免形成不正确的 图案在光致抗蚀剂膜上。

公开(公告)号：US5908733A

公开(公告)日：1999-06-01

申请号：US953589

申请日：1997-10-17

申请人： Naka Onoda

发明人： Naka Onoda

IPC分类号： G21K5/04 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70466 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  Y10S430/143

摘要： To provide a method of and an apparatus for electron beam exposure convenient to be applied to the hybrid exposure of a pattern with ultra-fine design rules, a method of electron beam exposure according to an embodiment of the invention comprises: a primary field dividing step (S2) for dividing a second pattern to be drawn into a plurality of fields having a size whereon an electron beam can be radiated with negligible biasing distortion; a primary fitting step for performing a fitting process (S3) for each of the plurality of fields, wherein cubic compensation equations are adjusted to fit compensation values with the optical distortion, and a fitting error after compensation being calculated; a primary field dividing step for performing a field dividing process (S5) for each of the plurality of fields whereof the fitting error is larger than a predetermined allowable range, wherein a concerning field is divided into a pair of sub fields and the fitting process is performed for each of the sub fields; and a sub field dividing step for repeating the field dividing process for each of the sub fields, the fitting error thereof larger than the predetermined allowable range and a size thereof larger than a predetermine minimum size.

摘要翻译： 为了提供电子束曝光的方法和装置，其方便地应用于具有超精细设计规则的图案的混合曝光，根据本发明实施例的电子束曝光方法包括：主场分割步骤 （S2），用于将要绘制的第二图案划分成具有可以以可忽略的偏置变形来辐射电子束的尺寸的多个场; 用于对多个场中的每一个进行拟合处理（S3）的主要拟合步骤，其中调整立方补偿方程以适应具有光学失真的补偿值，并且计算补偿后的拟合误差; 主场分割步骤，用于对拟合误差大于预定容许范围的多个场中的每一个进行场分割处理（S5），其中相关场被划分成一对子场，并且拟合处理为 对每个子字段执行; 以及子场分割步骤，用于对每个子场重复场分割处理，其拟合误差大于预定容许范围，其尺寸大于预定最小尺寸。

公开(公告)号：US6103434A

公开(公告)日：2000-08-15

申请号：US222526

申请日：1998-12-28

申请人： Naka Onoda

发明人： Naka Onoda

IPC分类号： G03F7/20 ,  H01J37/302 ,  H01L21/027 ,  G03F9/00

CPC分类号： H01J37/3026

摘要： An electron beam direct drawing method has the steps of: converting drawing data for the electron beam direct drawing of a semiconductor device pattern on a chip into a predetermined size and shape; dividing the converted drawing data into multiple fields which are electron beam deflection regions; drawing the drawing data corresponding to each of the divided multiple fields on the chip by step and repeat method; wherein the converted drawing data dividing step is conducted such that the drawing data is divided into the multiple fields on the basis of the chip. Also disclosed is an electron beam direct drawing system which has: a memory which stores drawing data, which is converted into a predetermined size and shape for the electron beam direct drawing of a semiconductor device pattern on a chip; a main body to expose an electron beam on the chip according to the drawing data; a recording medium; and a drawing control section which reads out the drawing data stored in the memory according to a program recorded in the recording medium, divides the drawing data into multiple fields which are electron beam deflection regions, and draws the drawing data corresponding to each of the divided multiple fields on the chip by step and repeat method while exposing an electron beam by the main body; wherein the drawing control section determines the size of the chip and divides the read-out drawing data into multiple fields on the basis of the chip.

摘要翻译： 电子束直接拉伸法是将芯片上的半导体器件图案的电子束直接拉制的图形数据转换为规定的尺寸和形状的步骤; 将转换后的图形数据划分为多个电场束偏转区域; 通过逐步和重复方法绘制与分割的多个字段中的每一个对应的绘图数据; 其中，转换后的绘图数据分割步骤被进行，使得绘制数据基于芯片被划分为多个场。 还公开了一种电子束直接绘图系统，其具有：存储器，其将绘制数据转换为用于电子束直接拉制芯片上的半导体器件图案的预定尺寸和形状; 根据附图数据在芯片上露出电子束的主体; 记录介质; 以及绘制控制部分，根据记录在记录介质中的程序读出存储在存储器中的绘图数据，将绘图数据分成多个场，这些场是电子束偏转区域，并且绘制与分割的每一个对应的绘图数据 在主体暴露电子束的同时，逐步重复多个场; 其中绘制控制部分确定芯片的尺寸，并且基于芯片将读出的绘制数据划分成多个场。

公开(公告)号：US06040583A

公开(公告)日：2000-03-21

申请号：US083095

申请日：1998-05-22

申请人： Naka Onoda

发明人： Naka Onoda

IPC分类号： G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766

摘要： An electron beam exposure system has a continuous stage drive for driving a stage at a constant speed. Area of a semiconductor chip is divided into an array of unit meshes to calculate pattern density in each mesh. A group of meshes having an equal density level is combined as a sub-strip region having dimensions equal to or lower than the maximum width determined based on the ability of the electron beam exposure system.

摘要翻译： 电子束曝光系统具有用于以恒定速度驱动平台的连续级驱动。 将半导体芯片的面积划分成单位网格的阵列，以计算每个网格中的图案密度。 将具有相同密度级的一组网格组合成具有等于或小于基于电子束曝光系统的能力确定的最大宽度的子带区域。

公开(公告)号：US5949079A

公开(公告)日：1999-09-07

申请号：US253075

申请日：1999-02-19

申请人： Naka Onoda

发明人： Naka Onoda

IPC分类号： G21K5/04 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70466 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  Y10S430/143

摘要： A method and an apparatus for electron beam exposure convenient to be applied to the hybrid exposure of a pattern with ultra-fine design rules, a method of electron beam exposure comprises: a primary field dividing step (S2) for dividing a second pattern to be drawn into a plurality of fields having a size whereon an electron beam can be radiated with negligible biasing distortion; a primary fitting step for performing a fitting process (S3) for each of the plurality of fields, wherein cubic compensation equations are adjusted to fit compensation values with the optical distortion, and a fitting error after compensation being calculated; a primary field dividing step for performing a field dividing process (S5) for each of the plurality of fields whereof the fitting error is larger than a predetermined allowable range, wherein a concerning field is divided into a pair of sub fields and the fitting process is performed for each of the sub fields; and a sub field dividing step for repeating the field dividing process for each of the sub fields, the fitting error thereof larger than the predetermined allowable range and a size thereof larger than a predetermine minimum size.

摘要翻译： 一种用于电子束曝光的方法和装置，其适用于具有超精细设计规则的图案的混合曝光，电子束曝光的方法包括：将第二图案划分为第一图案的主场分割步骤（S2） 被绘制成具有能够以可忽略的偏置变形而辐射电子束的尺寸的多个场; 用于对多个场中的每一个进行拟合处理（S3）的主要拟合步骤，其中调整立方补偿方程以适应具有光学失真的补偿值，并且计算补偿后的拟合误差; 主场分割步骤，用于对拟合误差大于预定容许范围的多个场中的每一个进行场分割处理（S5），其中相关场被划分成一对子场，并且拟合处理为 对每个子字段执行; 以及子场分割步骤，用于对每个子场重复场分割处理，其拟合误差大于预定容许范围，其尺寸大于预定最小尺寸。