发明授权
- 专利标题: Semiconductor laser
- 专利标题(中): 半导体激光器
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申请号: US924453申请日: 1997-08-28
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公开(公告)号: US5953357A公开(公告)日: 1999-09-14
- 发明人: Shoji Hirata , Shiro Uchida , Koji Iwamoto , Hiroki Nagasaki , Tsuyoshi Tojyo
- 申请人: Shoji Hirata , Shiro Uchida , Koji Iwamoto , Hiroki Nagasaki , Tsuyoshi Tojyo
- 申请人地址: JPX Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-249134 19960830
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/065 ; H01S5/10 ; H01S5/223 ; H01S5/327 ; H01S3/19
摘要:
An AlGaInP-based buried-ridge semiconductor laser includes an n-type GaAs current blocking layer 8 buried in opposite sides of a ridge stripe portion 7 which is made of an upper-layer portion of a p-type AlGaInP cladding layer 4, p-type GaInP intermediate layer 5 and p-type GaAs contact layer 6. The ridge stripe portion 7 includes tapered regions 7a having the length of L1 at cavity-lengthwise opposite ends of the ridge stripe portion 7.
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