发明授权
- 专利标题： Method of manufacturing thin film transistor
- 专利标题（中）： 制造薄膜晶体管的方法
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申请号： US721948申请日： 1996-09-27
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公开(公告)号： US5953595A公开(公告)日： 1999-09-14
- 发明人: Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui
- 申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-253820 19950929; JPX8-207161 19960806
- 主分类号： G03F7/42
- IPC分类号： G03F7/42 ; H01L21/027 ; H01L21/306 ; H01L21/336 ; H01L29/786 ; H01L21/00
摘要：
The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.
公开/授权文献
- US5191177A Tube speaker 公开/授权日：1993-03-02
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