发明授权
- 专利标题: Oxidation resistant high conductivity copper layers for microelectronic applications and process of making same
- 专利标题(中): 耐氧化高导电铜层
-
申请号: US837770申请日: 1997-04-22
-
公开(公告)号: US5959358A公开(公告)日: 1999-09-28
- 发明人: William A. Lanford , Peijun Ding
- 申请人: William A. Lanford , Peijun Ding
- 申请人地址: NY Albany
- 专利权人: Research Foundation of State University of New York
- 当前专利权人: Research Foundation of State University of New York
- 当前专利权人地址: NY Albany
- 主分类号: C23C14/18
- IPC分类号: C23C14/18 ; C23C14/58 ; H01L21/768 ; H01L23/532 ; H05K1/03 ; H05K1/09 ; H05K3/14 ; H01L23/54 ; C23C14/34 ; H01L23/48
摘要:
A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.
公开/授权文献
- US4860375A High speed cellular processing system 公开/授权日:1989-08-22
信息查询
IPC分类: