-
公开(公告)号:US20230136666A1
公开(公告)日:2023-05-04
申请号:US17823021
申请日:2022-08-29
IPC分类号: H05K1/03 , H05K1/09 , H01B3/28 , H05K3/14 , A61B5/27 , D06M11/65 , D06M23/08 , D06M11/83 , D06M15/693 , D06B11/00
摘要: Electronic textiles and methods of fabrication electronic textiles. Nanoparticles of a conductive material are sprayed along a conductive path into a fabric material so as to penetrate into the fabric. A layer of a second conductor material is coated over the nanoparticles along the conductive path. A layer of an insulator material is coated over the layer of the second conductor material so as to encapsulate the conductive path and form a trace. An electrode configured to contact a subject wearing the fabric material includes a layer of a third conductor material coated over the layer of the second conductor and electrically coupled with the conductive path. An electrical connector is secured to the fabric material and electrically coupled with the conductive path. The nanoparticles are sprayed onto the fabric material using a dual regime spray process implemented with a dual regime spray system.
-
公开(公告)号:US20230095608A1
公开(公告)日:2023-03-30
申请号:US17485250
申请日:2021-09-24
申请人: Intel Corporation
发明人: Adel Elsherbini , Aleksandar Aleksov , Feras Eid , Henning Braunisch , Thomas L. Sounart , Johanna Swan , Beomseok Choi , Krishna Bharath , William J. Lambert , Kaladhar Radhakrishnan
IPC分类号: H05K3/14 , H05K3/10 , H05K3/30 , H01L21/768 , H01L21/82
摘要: A embedded passive structure, a microelectronic system, and an integrated circuit device assembly, and a method of forming the embedded passive structure. The embedded passive structure includes a base layer; a passive device attached to the base layer; a first power plane comprising metal and adjacent an upper surface of the base layer, the first power plane having a portion electrically coupled to a terminal of the passive device, wherein an upper surface of a combination of the first power plane and the passive device defines a recess; a second power plane comprising metal, the second power plane at least partially within the recess and having a lower surface that conforms with the upper surface of the combination; and a liner including a dielectric layer between the first power plane and the second power plane.
-
公开(公告)号:US11565825B2
公开(公告)日:2023-01-31
申请号:US17306581
申请日:2021-05-03
IPC分类号: B32B5/24 , B32B5/28 , B32B27/06 , B32B27/08 , B32B27/12 , B32B27/20 , B32B27/26 , B32B27/38 , B32B37/24 , B32B38/08 , H05K1/00 , H05K1/02 , H05K1/03 , H05K1/14 , H05K3/07 , H05K3/14 , G21F1/00 , B64D45/02 , B32B5/02 , B32B9/00 , B32B9/04 , B32B15/08 , B32B15/20 , B32B27/10 , B32B27/36 , B32B15/09 , B32B7/12 , B32B27/28 , B32B21/08 , B32B5/26 , B32B15/088 , B32B27/18 , B32B29/02 , B32B3/26 , B32B5/18 , B32B27/34 , B32B15/14 , B32B3/12 , B32B21/10 , B64C1/12 , B64C3/20
摘要: Multifunctional surfacing materials for use in composite structures are disclosed. According to one embodiment, the surfacing material includes (a) a stiffening layer, (b) a curable resin layer, (c) a conductive layer, and (d) a nonwoven layer, wherein the stiffening layer (a) and the nonwoven layer (d) are outermost layers, and the exposed surfaces of the outermost layers are substantially tack-free at room temperature (20° C. to 25° C.). The conductive layer may be interposed between the curable resin layer and the stiffening layer or embedded in the curable resin layer. According to another embodiment, the surfacing material includes a fluid barrier film between two curable resin layers. The surfacing materials may be in the form of a continuous or elongated tape that is suitable for automated placement.
-
公开(公告)号:US11492718B1
公开(公告)日:2022-11-08
申请号:US17583236
申请日:2022-01-25
发明人: Yao-Sheng Lai , Jui-Chang Chou
摘要: An electrodeposited copper foil includes a bulk copper foil. When a weight of the electrodeposited copper foil is increased to 105.0 wt % during a thermogravimetric analysis (TGA) performed on the electrodeposited copper foil at a heating rate of 5° C./min and an air flow rate of 95 mL/min, a heating temperature of the TGA is defined as T105.0 wt % and in a range of 550° C. to 750° C.
-
公开(公告)号:US20220205077A1
公开(公告)日:2022-06-30
申请号:US17655388
申请日:2022-03-18
IPC分类号: C23C14/04 , C23F1/28 , H05B33/10 , H01L51/50 , C23F1/02 , C23C14/24 , C23C14/12 , B05C21/00 , C30B25/04 , C23C16/04 , H05K3/14 , B05B12/20
摘要: A deposition mask in which deformation of long sides is restrained is manufactured. A manufacturing method of a deposition mask includes a step of preparing a metal plate; a processing step of processing the metal plate into an intermediate product comprising: a plurality of deposition mask portions each including a pair of long sides and a pair of short sides, and having a plurality of through-holes formed therein; and a support portion that surrounds the plurality of deposition mask portions, and is partially connected to the short sides of the plurality of deposition mask portions; and a separation step of separating the deposition mask portions from the support portion to obtain the deposition mask. In the intermediate product, the long sides of the deposition mask portions are not connected to the support portion.
-
公开(公告)号:US11271119B2
公开(公告)日:2022-03-08
申请号:US16194407
申请日:2018-11-19
申请人: Orbotech Ltd.
发明人: Michael Zenou , Zvi Kotler
IPC分类号: H01L31/0224 , H05K3/14 , H01L21/48 , H01L21/285 , C23C14/04 , C23C14/28 , B23K26/34 , B23K26/0622 , B23K26/12 , B23K26/00 , B23K26/08 , B23K103/00 , B23K101/40 , H01L31/05
摘要: A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.
-
公开(公告)号:US11191678B2
公开(公告)日:2021-12-07
申请号:US15890901
申请日:2018-02-07
申请人: Raja Singh Tuli
发明人: Raja Singh Tuli
摘要: The present invention discloses a method of manufacturing a diaper that has multiple moisture sensing elements on interior side of its bottom impermeable layer or on any surface of the top permeable layer. The moisture sending elements are made by spraying conductive ink on a moving sheet of either the bottom impermeable layer or the top permeable layer, before other layers of the diaper are attached. Spraying of conductive ink on the moving sheet causes parallel lines of conductive inks to be formed on the layer. The parallel lines of conductive ink run through the entire length of either of the layers and are designed to get connected with a detecting device. When a user urinates inside the diaper, the moisture causes a closed circuit between at least two of the parallel lines of conductive inks. These formations of closed circuits, between parallel lines of conductive inks, are detected by the detecting device. Also, with increasing volume of moisture, the resistance of the closed circuits also tends to decrease. This rate of decrease of resistance is also detected by the detecting device and is used to calculate a volume of moisture present in the diaper. The detecting device then generates a suitable alarm to give an idea about the saturation level of the diaper. The process of manufacturing sensing elements by spraying conductive inks on moving sheet of layer reduces the processing and modification overhead of specially designed conductive ink printers and also does not impact the manufacturing time of a diaper manufacturing assembly line.
-
公开(公告)号:US20210274654A1
公开(公告)日:2021-09-02
申请号:US17325695
申请日:2021-05-20
摘要: An implantable electrical connecting device includes a first elastic multi-ply layer and a second elastic multi-ply layer. The first elastic multi-ply layer has a first electrically conductive layer and a plurality of first electrical contacts electrically conductively connected to the first electrically conductive layer of the first elastic multi-ply layer. The second elastic multi-ply layer has a first electrically conductive layer and a plurality of second electrical contacts electrically conductively connected to the first electrically conductive layer of the second elastic multi-ply layer. The second electrical contacts make contact with the first electrical contacts.
-
公开(公告)号:US10993667B2
公开(公告)日:2021-05-04
申请号:US16370969
申请日:2019-03-30
申请人: ECOM Medical, Inc.
发明人: Guy Russell Lowery
IPC分类号: B05D1/32 , B05B12/20 , A61B5/02 , A61B5/00 , A61B5/024 , A61B5/285 , A61B5/287 , A61M16/04 , A61B17/00 , H05K3/14
摘要: A system for obtaining signals related to electrical activity of the heart of a subject includes a sensing device including an elongate member having a distal end configured for placement within a body lumen of a subject, and a proximal end configured to extend from the subject, an actuation portion carried by the elongate member and configured for placement within the body lumen, the actuation portion having a low-profile state for delivery within the body lumen and an expanded state, and one or more sensors disposed on the actuation portion, each including a contact surface configured to contact an interior wall of the body lumen, wherein the actuation portion is configured to cause the contact surface of each of the one or more sensors to contact a location on the interior wall of the body lumen to provide a signal component for producing one or more electrocardiogram signals.
-
公开(公告)号:US10967463B2
公开(公告)日:2021-04-06
申请号:US16381445
申请日:2019-04-11
发明人: Vamsi Borra , Daniel G. Georgiev , Srikanth Itapu
IPC分类号: H01L23/50 , B23K35/26 , B23K1/00 , H05K1/09 , B23K101/42 , B23K103/00 , B23K101/40 , H05K3/16 , H05K3/14
摘要: Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.
-
-
-
-
-
-
-
-
-