发明授权
- 专利标题: Output buffer for memory circuit
- 专利标题(中): 存储器电路的输出缓冲器
-
申请号: US000765申请日: 1997-12-30
-
公开(公告)号: US5959474A公开(公告)日: 1999-09-28
- 发明人: Jong Hoon Park , Tae Hyung Jung
- 申请人: Jong Hoon Park , Tae Hyung Jung
- 申请人地址: KRX Chungcheongbuk-do
- 专利权人: LG Semicon Co., Ltd.
- 当前专利权人: LG Semicon Co., Ltd.
- 当前专利权人地址: KRX Chungcheongbuk-do
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; H03K19/003 ; H03K3/00
摘要:
An output buffer circuit comprising a pull-up transistor, a pull-down transistor coupled to the pull-up transistor, a first voltage source for supplying a driving voltage, a second voltage source for supplying a reference voltage, a device for comparing the driving voltage with the reference voltage, a driving voltage detector for producing a signal in response to operation of the comparing device, first and second pull-up driving buffers, the first and second pull-up driving buffers being activated according to the signal from the driving voltage detector, the pull-up transistor being driven by one of the pull-up driving buffers, and first and second pull-down driving buffers, the first and second pull-down driving buffers being activated according to the signal from the driving voltage detector, and the pull-down transistor being driven by one of the pull-down driving buffers.
公开/授权文献
- US5328525A Method and composition for treatment of metals 公开/授权日:1994-07-12
信息查询