发明授权
- 专利标题： Method of manufacturing power semiconductor devices
- 专利标题（中）： 功率半导体器件的制造方法
-
申请号： US848187申请日： 1997-04-29
-
公开(公告)号： US5960286A公开(公告)日： 1999-09-28
- 发明人: Yoshihiro Minami , Shigeru Hasegawa , Hiroshi Takenaka , Tsuneo Ogura , Shinji Sato
- 申请人： Yoshihiro Minami , Shigeru Hasegawa , Hiroshi Takenaka , Tsuneo Ogura , Shinji Sato
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-024090 19940222; JPX6-207178 19940831
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8249 ; H01L21/84 ; H01L27/12 ; H01L21/76
摘要：
A method of manufacturing power semiconductor device, having an area of 3 cm.sup.2 or more, comprises the step of preparing a power semiconductor device divided into cell blocks and forming power semiconductor elements whose minimum linewidth is less than 10 .mu.m and having at least main electrodes completed in the cell blocks, the step of determining cell blocks having faulty portions, and the step of selectively electrically separating the main electrodes in the faulty cell blocks from the main electrodes in the good cell blocks.
公开/授权文献
- US4754360A Arc extinguishing apparatus having sensing of initial arc 公开/授权日：1988-06-28
信息查询
IPC分类:
