发明授权
- 专利标题: Semiconductor laser device and manufacturing method thereof
- 专利标题(中): 半导体激光器件及其制造方法
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申请号: US773346申请日: 1996-12-26
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公开(公告)号: US5963572A公开(公告)日: 1999-10-05
- 发明人: Ryoji Hiroyama , Takahiro Uetani , Kiyoshi Oota , Koji Komeda , Masayuki Shono , Akira Ibaraki , Keiichi Yodoshi
- 申请人: Ryoji Hiroyama , Takahiro Uetani , Kiyoshi Oota , Koji Komeda , Masayuki Shono , Akira Ibaraki , Keiichi Yodoshi
- 申请人地址: JPX Moriguchi
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Moriguchi
- 优先权: JPX7-343411 19951228; JPX8-068393 19960325; JPX8-068394 19960325
- 主分类号: H01S5/22
- IPC分类号: H01S5/22 ; H01S5/223 ; H01S3/19
摘要:
A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.
公开/授权文献
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