公开(公告)号：US5963572A

公开(公告)日：1999-10-05

申请号：US773346

申请日：1996-12-26

申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

公开(公告)号：US5416790A

公开(公告)日：1995-05-16

申请号：US147779

申请日：1993-11-04

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5610096A

公开(公告)日：1997-03-11

申请号：US536370

申请日：1995-09-29

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5506170A

公开(公告)日：1996-04-09

申请号：US365176

申请日：1994-12-28

申请人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

发明人： Keiichi Yodoshi ,  Akira Ibaraki ,  Masayuki Shono ,  Shoji Honda ,  Takatoshi Ikegami ,  Nobuhiko Hayashi ,  Koutarou Furusawa ,  Atushi Tajiri ,  Toru Ishikawa ,  Kenichi Matsukawa ,  Teruaki Miyake ,  Takenori Goto ,  Mitsuaki Matsumoto ,  Daisuke Ide ,  Yasuyuki Bessho

IPC分类号： H01S5/065 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01L21/20

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/3211

摘要： A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

摘要翻译： 公开了一种具有自持脉动的半导体激光器，其中在第一导电半导体衬底上依次形成第一导电类型，有源层和具有条纹脊的第二导电类型的第二包层的第一包层 类型。 第一和第二覆层具有比有源层更大的折射率和更大的带隙。 在第一和第二包层中均形成有具有基本上等于与激发波长相对应的能量的能隙带的饱和光吸收层。 此外，在第一包层和有源层之间和/或有源层和第二包层之间形成折射率小于第一和第二包层的折射率的带隙的阻挡层。

公开(公告)号：US5608752A

公开(公告)日：1997-03-04

申请号：US430497

申请日：1995-04-28

申请人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

发明人： Takenori Goto ,  Nobuhiko Hayashi ,  Teruaki Miyake ,  Mitsuaki Matsumoto ,  Kenichi Matsukawa ,  Daisuke Ide ,  Koutarou Furusawa ,  Akira Ibaraki ,  Keiichi Yodoshi ,  Tatsuya Kunisato

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0658

摘要： In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.

摘要翻译： 在包括n型包覆层，形成在包层上的有源层，形成在有源层上的p型包层和设置在p型包层中的p型可饱和光吸收层的半导体激光器件中， 注入有源层的限流电流的限流宽度为W，有源层的厚度da，有源层的光限制因子GAMMA a，可饱和光吸收层的厚度ds，光限制因子 可饱和光吸收层的GAMMA和半导体激光装置的面上的光斑尺寸S被设定为满足预定关系。 光输出面的反射率设定在10〜20％的范围内。

公开(公告)号：US5727009A

公开(公告)日：1998-03-10

申请号：US811457

申请日：1997-03-03

申请人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi ,  Akira Ibaraki ,  Tatsuhiko Niina

发明人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi ,  Akira Ibaraki ,  Tatsuhiko Niina

IPC分类号： G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B7/1353 ,  G11B7/22 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/30 ,  H01S3/19

CPC分类号： G11B7/22 ,  G11B7/123 ,  G11B7/1353 ,  G11B7/1362 ,  H01L2224/48091 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02292

摘要： In an optical pickup apparatus, a laser beam emitted from a semiconductor laser device is reflected upward by a reflecting member, transmitted through a transmission type diffraction grating and split into at least three beams, and which beams are transmitted through a transmission type holographic optical element and condensed onto an optical recording medium by a condenser portion. A return beam reflected by the optical recording medium passes through the condenser portion and diffracted not to impinge upon the transmission type diffraction grating by the holographic optical element and directed to a photodetector portion of a light receiving device. The semiconductor laser device and the light receiving device are disposed in a mount member. The transmission type holographic optical element is supported by a supporting member three-dimensionally movably with respect to the mount member, and the supporting member or/and the holographic optical element is/are fixed with adhesive material with the transmission type holographic optical element being positioned with respect to the mount member.

摘要翻译： 在光学拾取装置中，从半导体激光装置发射的激光束被反射部件向上反射，通过透射型衍射光栅透射并分裂成至少三束光束，并且哪些光束通过透射型全息光学元件 并通过冷凝器部分冷凝到光学记录介质上。 由光记录介质反射的返回光束通过冷凝器部分，并通过全息光学元件衍射而不被撞击在透射型衍射光栅上并被引导到光接收装置的光电检测器部分。 半导体激光装置和光接收装置设置在安装构件中。 透射型全息光学元件由相对于安装构件三维地移动的支撑构件支撑，并且支撑构件或/和全息光学元件被固定有粘合材料，透射型全息光学元件被定位 相对于安装构件。

公开(公告)号：US6144623A

公开(公告)日：2000-11-07

申请号：US14980

申请日：1998-01-28

申请人： Yasuaki Inoue ,  Takenori Goto ,  Atsushi Tajiri ,  Kazushi Mori ,  Minoru Sawada ,  Akira Ibaraki ,  Masayuki Shono

发明人： Yasuaki Inoue ,  Takenori Goto ,  Atsushi Tajiri ,  Kazushi Mori ,  Minoru Sawada ,  Akira Ibaraki ,  Masayuki Shono

IPC分类号： G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B7/00

CPC分类号： G11B7/1353 ,  G11B7/123 ,  G11B7/131 ,  G11B7/0912

摘要： A transmission-type holographic optical element has a four-segment holographic surface divided into four regions of equal areas by virtual dividing lines which are perpendicular to each other. The first dividing line is at an angle with respect to the track direction of an optical disk and the second dividing line is at an angle with respect to the radial direction of the optical disk before tracking phase adjustment. The first dividing line coincides with the track direction of the optical disk and the second dividing line coincides with the radial direction of the optical disk after tracking phase adjustment. A four-segment photodetection part is divided into four photodetection parts of equal areas by a dividing line substantially parallel to the radial direction of the optical disk and a dividing line perpendicular thereto. Parts of a main beam diffracted in two regions located on first diagonal positions of the four-segment holographic surface are condensed as condensed spots on adjacent positions of the first dividing line of the four-segment photodetection part on opposite sides, and parts of the main beam diffracted in the remaining two regions located on second diagonal positions are condensed as condensed spots on separate positions of the second dividing line of the four-segment photodetection part on opposite sides.

摘要翻译： 透射型全息光学元件具有通过彼此垂直的虚拟分割线被划分为相等面积的四个区域的四段全息表面。 第一分割线相对于光盘的轨道方向成一定角度，并且第二分割线在跟踪相位调整之前相对于光盘的径向方向成一定角度。 第一分割线与光盘的轨道方向一致，并且第二分割线在跟踪相位调整之后与光盘的径向一致。 四段光电检测部分通过基本上平行于光盘的径向的分割线和与其垂直的划分线分成四个具有相等面积的光电检测部分。 在四段全息表面的第一对角位置上的两个区域中衍射的主光束的部分在相对侧的四段光检测部分的第一分割线的相邻位置上被聚集为聚集点，主要部分 在位于第二对角位置的剩余两个区域中衍射的光束在相对侧的四段光检测部分的第二分割线的分离位置上被冷凝为聚光点。

公开(公告)号：US06212150B1

公开(公告)日：2001-04-03

申请号：US09027717

申请日：1998-02-23

申请人： Yasuaki Inoue ,  Takenori Goto ,  Atsushi Tajiri ,  Kazushi Mori ,  Minoru Sawada ,  Akira Ibaraki

发明人： Yasuaki Inoue ,  Takenori Goto ,  Atsushi Tajiri ,  Kazushi Mori ,  Minoru Sawada ,  Akira Ibaraki

IPC分类号： G11B700

CPC分类号： G11B7/131 ,  G11B7/0903 ,  G11B7/0909 ,  G11B7/123 ,  G11B7/1353

摘要： First and second photodiodes are arranged on the upper surface of a stem, returned light beams diffracted in the + 1st order by a transmission type holographic optical element are received by the first photodiode, while returned light beams diffracted in the − 1st order are received by the second photodiode. The first photodiode has a plurality of light receiving regions, and respectively outputs a reproducing signal, a focus error signal and a tracking error signal on the basis of the returned light beams. On the other hand, the second photodiode has a single light receiving region, and outputs a reproducing signal on the basis of the returned light beams.

摘要翻译： 第一和第二光电二极管布置在杆的上表面上，由透射型全息光学元件以+ 1次衍射的返回光束被第一光电二极管接收，而以-1次衍射的返回光束由 第二个光电二极管。 第一光电二极管具有多个光接收区域，并且基于返回的光束分别输出再现信号，聚焦误差信号和跟踪误差信号。 另一方面，第二光电二极管具有单个光接收区域，并且基于返回的光束输出再现信号。

公开(公告)号：US06339563B2

公开(公告)日：2002-01-15

申请号：US09725239

申请日：2000-11-29

申请人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

发明人： Kazushi Mori ,  Atsushi Tajiri ,  Yasuaki Inoue ,  Takenori Goto ,  Minoru Sawada ,  Akira Ibaraki ,  Daisuke Ide

IPC分类号： G11B7095

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/094

摘要： A grating surface of a diffraction grating diffracts a laser beam emitted from a semiconductor laser device in ±1st order directions. The grating surface is formed in a rectangular or elliptic shape in such dimensions that a light spot formed on an objective lens by ±1st order diffracted beams is located in an aperture of the objective lens and not displaced from the aperture even if the objective lens is horizontally moved in a tracking operation. A grating surface of another diffraction grating has a width smaller than the width of an overlap region of a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the +1st direction, entering an objective lens and a light spot on the diffraction grating corresponding to a part of a beam, diffracted in the −1st direction, entering the objective lens.

摘要翻译： 衍射光栅的光栅表面衍射从半导体激光器件发射的激光束的±1级方向。 光栅表面形成为矩形或椭圆形，其尺寸使得物镜上形成的±1阶衍射光束的光点位于物镜的孔径中，即使物镜为 在跟踪操作中水平移动。 另一个衍射光栅的光栅表面的宽度小于衍射光栅上与光束的一部分相对应的光点的重叠区域的宽度，该光束的一部分在+ 1方向衍射，进入物镜和光点 衍射光栅对应于在第一方向衍射的光束的一部分，进入物镜。

公开(公告)号：US5236864A

公开(公告)日：1993-08-17

申请号：US883923

申请日：1992-05-12

申请人： Kenichi Iga ,  Akira Ibaraki ,  Kenji Kawashima ,  Kotaro Furusawa ,  Toru Ishikawa

发明人： Kenichi Iga ,  Akira Ibaraki ,  Kenji Kawashima ,  Kotaro Furusawa ,  Toru Ishikawa

IPC分类号： H01S5/183 ,  H01S5/227 ,  H01S5/323

CPC分类号： H01S5/18308 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2222 ,  H01S5/32308 ,  Y10S148/095 ,  Y10S438/955

摘要： A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.

摘要翻译： 一种具有掩埋结构的表面发射型半导体激光器件的制造方法。 在形成GaAlAs / GaAs系统掩埋部分周围的GaAlAs / GaAs体系中，GaAlAs膜用作掩模层。 掩模层可以通过用于形成掩埋部分的晶体生长装置构成掩埋部分的有源层，包覆层等连续地形成。 当系统被蚀刻时，GaAlAs膜掩模防止系统掩埋部分变成底切，使得掩模在后续处理中具有更好的耐剥离性。