发明授权
- 专利标题： Simplified shallow trench isolation formation with no polish stop
- 专利标题（中）： 简化浅沟隔离结构，无抛光停止
-
申请号： US992488申请日： 1997-12-18
-
公开(公告)号： US5970362A公开(公告)日： 1999-10-19
- 发明人: Christopher F. Lyons , Basab Bandyopadhyay , Nick Kepler , Olov Karlsson , Larry Wang , Effiong Ibok
- 申请人： Christopher F. Lyons , Basab Bandyopadhyay , Nick Kepler , Olov Karlsson , Larry Wang , Effiong Ibok
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
An insulated trench isolation structure is formed in a semiconductor substrate omitting a barrier nitride polish stop layer, thereby simplifying the formation of the trench isolating structure, and enabling the substrate to be polished substantially flush with the trench fill. The planar trench fill-substrate interface avoids additional topography, thereby facilitating application of, and enhancing the accuracy of, photolithographic techniques in forming features with minimal dimensions.
公开/授权文献
信息查询
IPC分类:
