发明授权
US5972743A Precursor compositions for ion implantation of antimony and ion
implantation process utilizing same
失效
用于离子注入锑的前体组合物和利用其的离子注入工艺
- 专利标题： Precursor compositions for ion implantation of antimony and ion implantation process utilizing same
- 专利标题（中）： 用于离子注入锑的前体组合物和利用其的离子注入工艺
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申请号： US759761申请日： 1996-12-03
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公开(公告)号： US5972743A公开(公告)日： 1999-10-26
- 发明人: Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
- 申请人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
- 申请人地址： CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： CT Danbury
- 主分类号： C23C14/48
- IPC分类号： C23C14/48 ; C30B31/00 ; C30B31/22 ; H01L21/265 ; H01L21/338 ; H01L21/331
摘要：
A method for n-doping a material layer with antimony, comprising ion implanting antimony from an antimony precursor composition including a compound of the formula SbX.sub.n ((CH.sub.2).sub.y SiR.sub.3).sub.n-3, wherein: n is an integer having a value of 1 or 2; y is an integer having a value of from 1 to 3 inclusive; each R is independently selected from C.sub.1 -C.sub.4 alkyl; and each X is independently selected from halo substituents. The antimony precursor composition may further include a fluorine-containing auxiliary gas, to effect in situ cleaning of the ionization chamber during ion implantation.