发明授权
- 专利标题： Method of fabricating semiconductor device with a fuse portion
- 专利标题（中）： 制造具有熔丝部分的半导体器件的方法
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申请号： US908000申请日： 1997-08-11
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公开(公告)号： US5972756A公开(公告)日： 1999-10-26
- 发明人: Takashi Kono , Mikio Asakura , Hideto Hidaka , Kenichi Yasuda
- 申请人： Takashi Kono , Mikio Asakura , Hideto Hidaka , Kenichi Yasuda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-312410 19951130
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L21/02 ; H01L21/8242 ; H01L23/525 ; H01L27/108 ; H01S3/00
摘要：
In a method of fabricating a semiconductor device, an interlayer insulating film is selectively etched to remove a level difference at an area of the interlayer insulating film on a cell plate on cylindrical capacitors and simultaneously form a concave portion on a fuse portion. Since the etching is ended to a degree that the cell plate is not exposed, the concave portion can be formed on the fuse portion not exposed. This does not add a step of forming a protection film on the fuse portion.
公开/授权文献
- US5228475A Air flow control valve for a HVAC module 公开/授权日：1993-07-20
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