A power saving circuit for metal oxide silicon field effect transistors (MOSFETS) comprised of an MOS circuit comprising low threshold voltage MOSFETs, at least one MOS FET switch connected in series between the low threshold MOSFET and a power rail, at least one MOSFET switch being of low threshold voltage type similar to MOSFETS used in the MOS circuit, and apparatus for applying at least one control signal to the at least one MOSFET switch for enabling the at least one MOSFET switch to turn on and off, the at least one control signal having a voltage of at least one of VPP and VBB, wherein VPP is more positive than a normal power rail operating voltage VDD, and VBB is more negative than a normal opposite power rail operating voltage VSS.