发明授权
US5976918A Method of forming insulating film with few hydrogen atom inclusions
失效
形成几乎没有氢原子夹杂物的绝缘膜的方法
- 专利标题： Method of forming insulating film with few hydrogen atom inclusions
- 专利标题（中）： 形成几乎没有氢原子夹杂物的绝缘膜的方法
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申请号： US985633申请日： 1997-12-04
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公开(公告)号： US5976918A公开(公告)日： 1999-11-02
- 发明人: Toshimasa Matsuoka , Masayuki Nakano , Satoshi Morishita , Hiroshi Iwata , Seizo Kakimoto , Takashi Fukushima
- 申请人： Toshimasa Matsuoka , Masayuki Nakano , Satoshi Morishita , Hiroshi Iwata , Seizo Kakimoto , Takashi Fukushima
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-324978 19961205
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/314 ; H01L21/318 ; H01L21/324 ; H01L21/00 ; H01L21/20
摘要：
In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N--H) and generates monoatomic nitrogen when the gas dissociates.
公开/授权文献
- US5393362A Method for improving adhesion to metal 公开/授权日：1995-02-28
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