公开(公告)号：US08854608B2

公开(公告)日：2014-10-07

申请号：US13059821

申请日：2009-08-20

申请人： Seiichi Onoda ,  Keiichi Inoue ,  Masayuki Nakano

发明人： Seiichi Onoda ,  Keiichi Inoue ,  Masayuki Nakano

IPC分类号： G01N21/00 ,  G01D5/26 ,  G01D5/30 ,  G01B11/16

CPC分类号： G01B11/18 ,  G01D5/268 ,  G01D5/30

摘要： An optical fiber sensing system carries out accurate measurements while avoiding measurement noise factors. For example, effects of the emission power of a light source, fiber insertion loss, fluctuations in the sensitivity of a photo detector, fluctuations in the amplitude of an amplifier, the loss of optical energy due to bending of an optical fiber, the loss of optical energy due to connecting two or more optical fibers, and gain fluctuations of electric circuitry provided on a platform do not affect measurements. A reflective sensor is connected to an end of an optical fiber connected to a light source. The light source outputs physical measurement light and reflected light coming from the reflective sensor is separated into two beams of light. Information on the physical quantity of a measurement target object is detected on the basis of an intensity ratio of the two beams.

摘要翻译： 光纤传感系统执行准确的测量，同时避免测量噪声因素。 例如，光源的发射功率的影响，光纤插入损耗，光电检测器的灵敏度的波动，放大器的振幅的波动，光纤弯曲导致的光能的损失， 由于连接两根或多根光纤而导致的光能以及平台上提供的电路的增益波动不影响测量。 反射传感器连接到连接到光源的光纤的端部。 光源输出物理测量光，并将来自反射传感器的反射光分成两束光。 基于两个光束的强度比来检测关于测量对象物体的物理量的信息。

公开(公告)号：US07315060B2

公开(公告)日：2008-01-01

申请号：US11142770

申请日：2005-06-02

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Kotaro Kataoka ,  Masayuki Nakano

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Kotaro Kataoka ,  Masayuki Nakano

IPC分类号： H01L29/792

CPC分类号： H01L29/6684 ,  G11C16/0475 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/28291 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7923

摘要： A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the gate electrode. A P-type channel region is formed in a surface of the substrate on the side of the gate electrode. N-type first and second diffusion regions are formed on both sides of the channel region. The channel region is composed of an offset region located under the first and second memory function bodies and a gate electrode beneath region located under the gate electrode. The concentration of a dopant which imparts a P-type conductivity to the offset region is effectively lower than the concentration of a dopant which imparts the P-type conductivity to the gate electrode beneath region. This makes it possible to provide the semiconductor storage device which is easily shrunk in scale.

摘要翻译： 半导体存储器件具有通过栅极绝缘膜形成在半导体衬底上的单个栅电极。 形成在栅电极两侧的第一和第二记忆功能体。 在栅极侧的基板的表面形成P型沟道区。 在沟道区域的两侧形成N型第一和第二扩散区域。 沟道区域由位于第一和第二存储器功能体下面的偏移区域和位于栅电极下方的栅极电极构成。 赋予偏移区域的P型导电性的掺杂剂的浓度有效地低于向区域下方的栅电极施加P型导电性的掺杂剂的浓度。 这使得可以提供容易缩小的半导体存储装置。

公开(公告)号：US20060045716A1

公开(公告)日：2006-03-02

申请号：US11076408

申请日：2005-03-09

申请人： Naoya Muramoto ,  Arinobu Ishida ,  Masataka Takagi ,  Masayuki Nakano ,  Koichi Kawaguchi

发明人： Naoya Muramoto ,  Arinobu Ishida ,  Masataka Takagi ,  Masayuki Nakano ,  Koichi Kawaguchi

IPC分类号： B66C23/00

CPC分类号： E02F9/0891 ,  E02F3/34

摘要： A work vehicle with a front loader is disclosed. The work vehicle includes a traveling control section having an operator's seat, a hood provided forwardly of the traveling control section, a pair of masts provided on right and left sides of the hood, a pair of booms projecting forwardly from upper ends of the masts and an implement detachably connected to the booms. An upper face of the hood is inclined downwardly from its rear upper portion to its front upper portion. The inclined upper face is located adjacent a downward line of sight from an operator's space in the traveling control section to a connecting portion between each boom and the implement.

摘要翻译： 公开了一种具有前装载机的工作车辆。 工作车辆包括具有操作员座椅的行驶控制部分，设置在行驶控制部分的前方的罩，设置在发动机罩的右侧和左侧的一对桅杆，从桅杆的上端向前突出的一对吊杆， 可拆卸地连接到起重臂的工具。 罩的上表面从其后上部向下倾斜到其前上部。 倾斜的上表面邻近从行驶控制部分中的操作者空间的下行视线到每个吊杆和工具之间的连接部分。

公开(公告)号：US06291861B1

公开(公告)日：2001-09-18

申请号：US09345414

申请日：1999-06-30

申请人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

发明人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

IPC分类号： H01L21336

CPC分类号： H01L29/66772 ,  H01L21/2257 ,  H01L27/088 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/4941 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78654

摘要： A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide film at a first face, a portion of the source/drain regions being located above the first face. The electrode is in contact with the source/drain region at a second face, the second face constituting an angle with respect to the first face.

摘要翻译： 具有器件分离区域和有源区域的半导体器件包括栅极氧化膜，源极/漏极区域和电耦合到源极/漏极区域的电极。 有源区在第一面处与栅极氧化膜接触，源/漏区的一部分位于第一面的上方。 电极在第二面处与源极/漏极区域接触，第二面部相对于第一面构成一个角度。

公开(公告)号：US5960319A

公开(公告)日：1999-09-28

申请号：US699410

申请日：1996-08-19

申请人： Hiroshi Iwata ,  Masayuki Nakano ,  Shigeki Hayashida ,  Seizou Kakimoto ,  Toshimasa Matsuoka

发明人： Hiroshi Iwata ,  Masayuki Nakano ,  Shigeki Hayashida ,  Seizou Kakimoto ,  Toshimasa Matsuoka

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/44

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26526 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/823807 ,  H01L29/665 ,  Y10S257/90

摘要： A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

摘要翻译： 公开了一种半导体器件及其制造方法。 在硅半导体衬底上形成氮化硅膜。 然后将杂质离子注入到硅半导体衬底的所需区域中，使得氮化硅膜的氮原子和硅原子与杂质离子的引入一起并入到硅半导体衬底的表面中。 硅半导体衬底具有混入其中的最小化的氧含量，并且在注入杂质离子时恢复由氮原子填充的晶体缺陷。 制造的半导体器件没有栅极电极耗尽和结电流泄漏之间的折衷关系以及短沟道效应。

公开(公告)号：US09242496B2

公开(公告)日：2016-01-26

申请号：US13237438

申请日：2011-09-20

申请人： Masayuki Nakano ,  Kazushi Moriwaki

发明人： Masayuki Nakano ,  Kazushi Moriwaki

IPC分类号： B41J2/01 ,  B41J29/38 ,  B41M3/00 ,  B41M5/00 ,  B41J2/21 ,  B41J11/00

CPC分类号： B41J13/0009 ,  B41J2/2117 ,  B41J11/0015 ,  B41J11/002 ,  B41M3/008 ,  B41M5/0047 ,  B41M5/0064 ,  Y10T428/24868

摘要： A printed material (5) has a transparent base member (51), a first image layer (52) formed on the base member, an intermediate layer (53) formed on the first image layer, and a second image layer (54) formed on the intermediate layer. The intermediate layer has a lower white background layer (531) positioned above the first image layer, a light blocking layer (532) positioned above the lower white background layer, and an upper white background layer (533) positioned above the light blocking layer. In the printed material, a thickness of the light blocking layer is uneven in conformity with undulation of the first image layer, and therefore a surface of the intermediate layer which is in contact with the second image layer is flat. With this structure, it is possible to prevent or suppress the undulation of the first image layer from appearing in the second image layer.

摘要翻译： 印刷材料（5）具有透明基材（51），形成在基材上的第一图像层（52），形成在第一图像层上的中间层（53）和形成的第二图像层（54） 在中间层。 中间层具有位于第一图像层上方的较低白色背景层（531），位于下部白色背景层上方的遮光层（532）和位于遮光层上方的上部白色背景层（533）。 在印刷材料中，遮光层的厚度根据第一图像层的起伏而不均匀，因此与第二图像层接触的中间层的表面是平坦的。 利用这种结构，可以防止或抑制第一图像层的起伏在第二图像层中出现。

公开(公告)号：US08516692B2

公开(公告)日：2013-08-27

申请号：US12297438

申请日：2007-03-28

申请人： Yoshikazu Oshika ,  Munenori Hashimoto ,  Masayuki Nakano

发明人： Yoshikazu Oshika ,  Munenori Hashimoto ,  Masayuki Nakano

IPC分类号： H05K3/34

CPC分类号： H05K3/3463 ,  H01L24/29 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L33/62 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K2201/10992 ,  Y10T29/49144 ,  Y10T29/49179 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298

摘要： A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate (2) consists of a plurality of layers (5a) of a solder free from lead, which are different in its phase from one another. They are constituted by a layer of a phase that is completely melted, and a layer of a phase that is not completely melted at a temperature not less than a eutectic temperature of the solder. The solder layer (5) can be applied to a device joining substrate (1) comprising an electrode layer (4) formed on the base substrate (2) and the solder layer (5) formed on the electrode layer.

摘要翻译： 提供焊料层，利用该焊料层的器件接合用基板和制造基板的方法，由此，接合部件保持热不受影响，提高了焊点的初期接合强度，并且可以可靠地焊接设备。 形成在基底基板（2）上的焊料层由多个彼此不同的焊料的不含铅的焊料层（5a）组成。 它们由完全熔化的相的层和在不低于焊料的共晶温度的温度下不完全熔化的相的层构成。 焊料层（5）可以应用于包括形成在基底基板（2）上的电极层（4）和形成在电极层上的焊料层（5）的装置接合基板（1）。

公开(公告)号：US20090005219A1

公开(公告)日：2009-01-01

申请号：US12062147

申请日：2008-04-03

申请人： Eiji Miyazaki ,  Masayuki Nakano ,  Kenzo Ushiro ,  Masataka Takagi ,  Yutaka Inubushi

发明人： Eiji Miyazaki ,  Masayuki Nakano ,  Kenzo Ushiro ,  Masataka Takagi ,  Yutaka Inubushi

IPC分类号： F16H61/26

CPC分类号： F16H61/437 ,  E02F9/2004 ,  E02F9/2203 ,  Y10T74/2022 ,  Y10T477/694

摘要： A work vehicle operable in a rearward facing position using a simple construction is disclosed. The work vehicle includes a hydrostatic stepless change speed device for transmitting power from an engine to a traveling device, a change speed pedal mechanism operable in a forward facing position for changing speeds in the hydrostatic stepless change speed device, and a travel-control lever provided at a rear position of a vehicle body and operable in the rearward facing position. The travel-control lever and the change speed pedal mechanism are linked to each other through a mechanical interlocking mechanism so as to control the hydrostatic stepless change speed device by the travel-control lever through the change speed pedal mechanism.

摘要翻译： 公开了一种使用简单的结构在向后的位置中可操作的作业车辆。 工作车辆包括用于将动力从发动机传递到行驶装置的静液力无级变速装置，可在向前位置操作的变速踏板机构，用于改变静液压无级变速装置中的速度，以及提供的行驶控制杆 在车体的后部位置，并且可在向后的位置上操作。 行驶控制杆和变速踏板机构通过机械联锁机构相互连接，通过行驶控制杆通过变速踏板机构控制静液压无级变速装置。

公开(公告)号：US20080205013A1

公开(公告)日：2008-08-28

申请号：US12037958

申请日：2008-02-27

申请人： Yoshikazu OSHIKA ,  Munenori HASHIMOTO ,  Masayuki NAKANO

发明人： Yoshikazu OSHIKA ,  Munenori HASHIMOTO ,  Masayuki NAKANO

IPC分类号： H05K7/06 ,  H05K3/40 ,  C22C5/02

CPC分类号： H05K3/3463 ,  H01L24/29 ,  H01L24/33 ,  H01L24/45 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/157 ,  H01L2924/15787 ,  H05K2201/0269 ,  H05K2203/1105 ,  H05K2203/1157 ,  Y10T29/49149 ,  Y10T428/24917 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/00015

摘要： A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided.A device bonding substrate 1 including a substrate 2 and a lead free solder layer 5 formed on said substrate has a solder layer 5 consisting of a plurality of layers having mutually different phases, and oxygen concentration on the upper surface of the solder layer is lower than 30 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer 5. Carbon concentration on the upper surface of the solder layer 5 may be lower than 10 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer.

摘要翻译： 提供了一种焊接层和具有高的器件结合强度和低接合故障的电子器件接合衬底，即使通过简化的器件对衬底的接合方法及其制造方法也是如此。 包括形成在所述基板上的基板2和无铅焊料层5的器件接合基板1具有由具有相互不同相的多个层构成的焊料层5，焊料层的上表面的氧浓度低于 在构成焊料层5的上层的金属成分中，最可氧化的金属成分的浓度为30原子％。 焊料层5的上表面上的碳浓度可以低于构成焊料层的上层的金属成分中最可氧化的金属成分的浓度的10原子％。

公开(公告)号：US20050045962A1

公开(公告)日：2005-03-03

申请号：US10421713

申请日：2003-04-24

申请人： Hiroshi Iwata ,  Masayuki Nakano ,  Shigeki Hayashida ,  Seizou Kakimoto ,  Toshimasa Matsuoka

发明人： Hiroshi Iwata ,  Masayuki Nakano ,  Shigeki Hayashida ,  Seizou Kakimoto ,  Toshimasa Matsuoka

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/76

CPC分类号： H01L21/26506 ,  H01L21/2652 ,  H01L21/26526 ,  H01L21/2658 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/6659

摘要： A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

摘要翻译： 公开了一种半导体器件及其制造方法。 在硅半导体衬底上形成氮化硅膜。 然后将杂质离子注入到硅半导体衬底的所需区域中，使得氮化硅膜的氮原子和硅原子与杂质离子的引入一起并入到硅半导体衬底的表面中。 硅半导体衬底具有混入其中的最小化的氧含量，并且在注入杂质离子时恢复由氮原子填充的晶体缺陷。 制造的半导体器件没有栅极电极耗尽和结电流泄漏之间的折衷关系以及短沟道效应。