发明授权
- 专利标题： Etching material and etching method
- 专利标题（中）： 蚀刻材料和蚀刻方法
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申请号： US638119申请日： 1996-04-26
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公开(公告)号： US5976988A公开(公告)日： 1999-11-02
- 发明人: Toshimitsu Konuma , Akira Sugawara , Takeshi Nishi , Yukiko Uehara , Satoshi Murakami , Misako Nakazawa
- 申请人： Toshimitsu Konuma , Akira Sugawara , Takeshi Nishi , Yukiko Uehara , Satoshi Murakami , Misako Nakazawa
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX7-125910 19950426; JPX7-128923 19950428
- 主分类号： C09K13/08
- IPC分类号： C09K13/08 ; H01L21/311 ; H01L21/302 ; C09K13/00
摘要：
An alumina film, a silicon oxide film, and a silicon nitride film formed on a substrate containing a large amount of alumina are etched by using an etching material in which the concentration of ammonium fluoride, which is a component of BHF, is set low. Etching is performed by using an etching material that is an aqueous solution produced by mixing hydrofluoric acid, ammonium fluoride and water at a weight ratio of x:y:(100-x-y) where x and y satisfy a relationship y
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