发明授权
- 专利标题： Semiconductor laminating structure
- 专利标题（中）： 半导体层压结构
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申请号： US839903申请日： 1997-04-18
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公开(公告)号： US5981980A公开(公告)日： 1999-11-09
- 发明人: Takao Miyajima , Yann Le Bellego , Hiroji Kawai
- 申请人： Takao Miyajima , Yann Le Bellego , Hiroji Kawai
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-100350 19960422
- 主分类号： H01L29/201
- IPC分类号： H01L29/201 ; H01L29/812 ; H01L33/00 ; H01L33/16
摘要：
To provide a semiconductor laminating structure in which an epitaxial growth of a GaN system material is achieved on a substrate with an excellent matching property with the substrate. The semiconductor laminating structure includes the substrate having a perovskite structure and at least one GaN system chemical compound semiconductor layer formed on the substrate, wherein a major surface of the substrate is formed of a (111) crystal surface.
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