发明授权
- 专利标题: Photodiode structure augmented with active area photosensitive regions
- 专利标题(中): 光电二极管结构增加了有源区光敏区
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申请号: US977468申请日: 1997-11-24
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公开(公告)号: US5982011A公开(公告)日: 1999-11-09
- 发明人: Alexander Kalnitsky , Marco Sabatini
- 申请人: Alexander Kalnitsky , Marco Sabatini
- 申请人地址: TX Carrollton
- 专利权人: STMicroelectronics, Inc.
- 当前专利权人: STMicroelectronics, Inc.
- 当前专利权人地址: TX Carrollton
- 主分类号: H01L27/144
- IPC分类号: H01L27/144 ; H01L27/14
摘要:
A photodiode structure augmented with active area photosensitive regions is used for detecting impinging radiation. The photodiode includes a semiconductor base layer doped with impurities of a first carrier type, a field oxide layer disposed upon the base layer with an opening formed therethrough, a plurality of auxiliary oxide layers wherein each is separately disposed upon the base layer, and a semiconductor diffusion layer doped with impurities of a second carrier type arranged upon the base layer and in contact with the oxide layers. When the photodiode is electrically energized, a plurality of integral photosensitive regions is created within the depletion region to facilitate the detection of impinging radiation at an increased quantum efficiency.
公开/授权文献
- US5281042A Saddle clamp assembly 公开/授权日:1994-01-25
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