发明授权
US5982032A Electronic device having FETs on a low dielectric constant GaAs base
member and passive elements on a high dielectric constant base member
失效
在低介电常数GaAs基底元件上具有FET的电子器件和高介电常数基底元件上的无源元件
- 专利标题： Electronic device having FETs on a low dielectric constant GaAs base member and passive elements on a high dielectric constant base member
- 专利标题（中）： 在低介电常数GaAs基底元件上具有FET的电子器件和高介电常数基底元件上的无源元件
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申请号： US905151申请日： 1997-08-01
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公开(公告)号： US5982032A公开(公告)日： 1999-11-09
- 发明人: Yohei Ishikawa , Koichi Sakamoto , Hiroaki Tanaka
- 申请人： Yohei Ishikawa , Koichi Sakamoto , Hiroaki Tanaka
- 申请人地址： JPX
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX8-206086 19960805
- 主分类号： H01L25/18
- IPC分类号： H01L25/18 ; H01L21/8232 ; H01L25/04 ; H01L25/16 ; H01L27/06 ; H01L27/095 ; H01P5/08 ; H03H9/05 ; H01L23/34
摘要：
An electronic device includes one or more GaAs integrated circuits having a plurality of mutually independent field-effect transistors formed on a GaAs base-member; and one or more high-dielectric-constant base-members including a passive element on a surface thereof or therein.
公开/授权文献
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